Effects of polarization and permittivity gradients and other parameters on the anomalous vertical shift behavior of graded ferroelectric thin films

Zhou, Yan; Chan, Ho-Kei; Lam, Chi Hang; Shin, Franklin G.

doi:10.1063/1.1996833

Cited by 11 publications

(4 citation statements)

References 16 publications

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“…One example is the ferroelectrics with polarization gradients, or polarization-graded ferroelectrics. These polarization-graded ferroelectrics exhibit numerous exotic phenomena which include dramatic hysteresis loops offsets, transpacitor behavior, enormous pyroelectric responses, enhanced photovoltaic effect and other properties [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. In polarization-graded ferroelectrics the polarization gradients can be caused by compositional, stress or temperature gradients.…”

Section: Introductionmentioning

confidence: 99%

Depolarizing field in temperature-graded ferroelectrics from an atomistic viewpoint

Zhang

Ponomareva

2013

New J. Phys.

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An atomistic approach for computing the depolarizing, or internal, electric field in materials with inhomogeneous polarization is developed. Application of the approach for studying the depolarizing fields in technologically important (Ba 0.7 Sr 0.3 )TiO 3 ferroelectric alloy with temperature gradients has revealed the intrinsic features of these fields as well as their role in the establishment of polarization gradients. It is found that the depolarizing fields are inhomogeneous and can be tailored to yield both zero and non-vanishing potential drops. Such findings could pave the way to unusual thermoelectric materials, photovoltaics and locally conducting materials, all of which are at the frontier of current research. Contents

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Section: Introductionmentioning

confidence: 99%

Depolarizing field in temperature-graded ferroelectrics from an atomistic viewpoint

Zhang

Ponomareva

2013

New J. Phys.

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“…Other phenomena that manifest as dielectric relaxation, such as grain boundary and contact (electrode) effects [24,25], may emerge at a range of frequencies far from that used in this work. Also, phenomena such as interface effects and charge-carrier mobility, which are relevant for determining functional properties of heterogeneous ferroelectric systems (i.e., graded/multilayer ferroelectrics or ferroelectric superlattices), are not taking into account [26][27][28].…”

Section: This Is the Post-print (Ie Final Draft Post-refereeing) Ofmentioning

confidence: 99%

Low temperature dielectric relaxation in ordinary perovskite ferroelectrics: enlightenment from high-energy x-ray diffraction

Ochoa¹,

Levit²,

Fancher³

et al. 2017

J. Phys. D: Appl. Phys.

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Ordinary ferroelectrics exhibit a second order phase transition that is characterized by a sharp peak in the dielectric permittivity at a frequency-independent temperature. Furthermore, these materials show a low temperature dielectric relaxation that appears to be a common behavior of perovskite systems. Tetragonal lead zirconate titanate is used here as a model system in order to explore the origin of such an anomaly, since there is no consensus about the physical phenomenon involved in it. Crystallographic and domain structure studies are performed from temperature dependent synchrotron X-ray diffraction measurement. Results indicate that the dielectric relaxation cannot be associated with crystallographic or domain configuration changes. The relaxation process is then parameterized by using the Vogel-Fulcher-Tammann phenomenological equation. Results allows us to hypothesize that the observed phenomenon is due to changes in the dynamic behavior of the ferroelectric domains related to the fluctuation of the local polarization.Keywords: ferroelectrics, piezoelectric materials, dielectric response, dielectric relaxation This is the post-print (i.e. final draft post-refereeing) of the publication. The final publication is available at IOPSience via http://dx.doi.org/10.1088IOPSience via http://dx.doi.org/10. /1361 2 The macroscopic dielectric response of ferroelectric materials is closely linked to the crystallographic structure, to the ferroelectric/ferroelastic domain structure and to the dynamic behaviors of that domain structure [1]. One of the most attractive aspects of dielectric studies is that the temperature-dependent dielectric response is also sensitive to changes in the crystal structure as well as in the domain structure and/or their dynamic behavior [2]. For instance, phase transitions appear as a maximum in the real and/or imaginary permittivity versus temperature curve. In particular, the paraelectric to ferroelectric phase transition manifests as a sharp peak at a frequency-independent temperature in ordinary ferroelectrics while a wide peak at a temperature that is frequency-dependent is observed in the so-called relaxor ferroelectrics [3].A widely studied dielectric anomaly appears at low temperatures in ordinary perovskite ferroelectrics [4][5][6][7][8][9][10][11][12][13][14][15][16]. In the PbZr1-xTixO3 (PZT) system, for instance, it appears independently of the crystallographic phase as a flat region in the real part of the permittivity (ε'), and as a dispersion of the maximum in the imaginary part of the permittivity (ε'') [5]. When the PZT system is acceptor doped, the frequency-dependent maximum of ε'' becomes more visible [5]. However, the anomalous behavior of the permittivity seem to vanish when the material is donor doped [4][5][6]. A similar anomalous temperature-dependent permittivity has been reported in NaNbO3 piezoresponse force microscopy studies showed no phase contrast. Algueró el at. [16] This is the post-print (i.e. final draft post-refereeing) of the publication. ...

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“…to the polarization vector in ferroelectric materials. Because of their unconventional ferroelectric properties, they present dramatic hysteresis loop offsets, transpacitor behavior, enormous pyroelectric responses, and other exotic phenomenon [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20], which have attracted a lot of attention recent these years.…”

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confidence: 99%

Analysis of polarization offsets observed for temperature-graded ferroelectric materials

et al. 2016

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A transverse Ising model in the framework of the mean field approximation is developed to analyze the polarization offsets phenomena in temperature-graded ferroelectric materials. A function of two-spin exchange interaction strength has been introduced to describe the ferroelectric distortion due to the distribution of temperature gradients in materials. Comparisons of the computational results with the experimental data reveal some fundamental factors in the formation of polarization offsets. It is shown that ferroelectric distortion has influenced much on polarization offsets in temperature-graded ferroelectric materials. When quantum fluctuation effect as well as ferroelectric distortion is considered, we have successfully reproduced the experimental observations qualitatively, especially for the indistinguishable polarization offsets from the background at small temperature gradients, which were not successfully reproduced in prior theoretical studies.

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Effects of polarization and permittivity gradients and other parameters on the anomalous vertical shift behavior of graded ferroelectric thin films

Cited by 11 publications

References 16 publications

Depolarizing field in temperature-graded ferroelectrics from an atomistic viewpoint

Depolarizing field in temperature-graded ferroelectrics from an atomistic viewpoint

Low temperature dielectric relaxation in ordinary perovskite ferroelectrics: enlightenment from high-energy x-ray diffraction

Analysis of polarization offsets observed for temperature-graded ferroelectric materials

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