Effects of post-deposition annealing temperature and ambient on RF magnetron sputtered Sm2O3 gate on n-type silicon substrate

Samarium oxide thin films deposited by reactive sputtering: Effects of sputtering power and substrate temperature on microstructure, morphology and electrical properties

“…The rare-earth oxides are predicted to be stable in contact with the Si up to 1000 1C, preventing the formation of silicide layers [11]. Among other rare-oxides, samarium oxide (Sm 2 O 3 ) has some basic attractive characteristics such as high dielectric constant (5.25-30 [10,14] depending on thickness and film quality), wide band gap [16], large conduction band offsets [17], thermodynamic stability on the underlying Si surface [18,19], and low hygroscopic characteristics.…”

“…SiO x . Moreover, sputtering can be easily scaled up from small-sized laboratory targets to large-scale industrial machines and provide uniformity of the films, good reproducibility of film properties, and a simple deposition process [18].…”

Frequency dependent gamma-ray irradiation response of Sm2O3 MOS capacitors

“…The measured capacitance value of the Sm 2 O 3 MOS capacitor is 6.18 Â 10 À9 F in the strong accumulation region, and the dielectric constant (k) was calculated and found to be about 22 which is lower than epitaxial Sm 2 O 3 layer [13], but significantly higher than other reported values [14,28,29]. Moreover, variations on the flatband voltages have been also observed with applied voltage frequency.…”

“…The investigations of finding new alternative dielectric materials are crucial for development of MOS-based devices to be used in irradiation environment. Thus, samarium oxide (Sm 2 O 3 ) could be one of the suitable dielectrics compared to other dielectric materials due to the fact that it maintains many attractive features in itself alone such as high dielectric constant up to 30 [13,14] depending on film quality, thermodynamically stable on the underlying Si surface up to 1000°C preventing the formation of silicide layers and rough surfaces [15], wide band gap [16], and large conduction band offsets [17].…”

MOCVD Synthesis of Terbium Oxide Films and their Optical Properties

“…Rare‐earth (RE) oxide films possess properties such as high mechanical durability, thermal stability, radiation resistance, high dielectric constant ( ε = 14−30) and very small leakage current density, refractive indexes of about 2, high transparency over a wide spectral range (between 0.22 and 2 µm), and variable electrical conductivity in different gaseous fluids. These properties justify their application as insulators in microelectronics, having a number of advantages over silica, HfO 2 , and ZrO 2 , as gas detectors, as luminophores, and in optical electronics . Tb is one of the RE metals, possesses an oxidation number from +3 to +4, and forms oxides according to the general formula R n O 2 n ‐2 m (R = Ce, Pr, Tb), depending on the procedure conditions .…”