Effects of Proton and X-ray Irradiation on Graphene Field-Effect Transistors with Thin Gate Dielectrics

Francis, S.A.; Petrosky, James C.; McClory, John W.; Cress, Cory D.

doi:10.1109/tns.2014.2364780

Cited by 12 publications

(5 citation statements)

References 34 publications

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“…An increase in PL and carrier lifetime is very surprising: Initially, it was expected that radiation could lead to the formation of new defects, but not to defect healing. We note that low-energy X-ray irradiation of graphene in oxygen environments can lead to the formation of oxygen-related defects 43 – 45 . Although radiation-induced healing of nanomaterials has been reported 46 , such an effect has not been observed with γ-rays, specifically not with such remarkable consequences.…”

Section: Resultsmentioning

confidence: 89%

Radiation tolerance of two-dimensional material-based devices for space applications

et al. 2019

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Characteristic for devices based on two-dimensional materials are their low size, weight and power requirements. This makes them advantageous for use in space instrumentation, including photovoltaics, batteries, electronics, sensors and light sources for long-distance quantum communication. Here we present a comprehensive study on combined radiation effects in Earth’s atmosphere on various devices based on these nanomaterials. Using theoretical modeling packages, we estimate relevant radiation levels and then expose field-effect transistors, single-photon sources and monolayers as building blocks for future electronics to γ-rays, protons and electrons. The devices show negligible change in performance after the irradiation, suggesting robust suitability for space use. Under excessive γ-radiation, however, monolayer WS2 shows decreased defect densities, identified by an increase in photoluminescence, carrier lifetime and a change in doping ratio proportional to the photon flux. The underlying mechanism is traced back to radiation-induced defect healing, wherein dissociated oxygen passivates sulfur vacancies.

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Section: Resultsmentioning

confidence: 89%

Radiation tolerance of two-dimensional material-based devices for space applications

et al. 2019

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“…The research indicates that irradiation leads to graphene lattice damage in which the effective scattering of protons and/or the damage cross-section is substantially larger. Francis S. A. et al [16] irradiated back-gate GFETs with 10 keV X-rays and 1.8 MeV protons. The data reveal that oxygen doping due to X-ray irradiation increases the drain current and that dedoping and displacement damage produced by protons leads to an instantaneous drop in the drain current.…”

Section: Introductionmentioning

confidence: 99%

Study of High-Energy Proton Irradiation Effects in Top-Gate Graphene Field-Effect Transistors

Lu,

Guo,

Lei

et al. 2023

Electronics

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In this article, the effects of high-energy proton irradiation on top-gate graphene field-effect transistors (GFETs) were investigated by using 20 MeV protons. The basic electrical parameters of the top-gate GFETs were measured before and after proton irradiation with a fluence of 1 × 1011 p/cm2 and 5 × 1011 p/cm2, respectively. Decreased saturation current, increased Dirac sheet resistance, and negative drift in the Dirac voltage in response to proton irradiation were observed. According to the transfer characteristic curves, it was found that the carrier mobility was reduced after proton irradiation. The analysis suggests that proton irradiation generates a large net positive charge in the gate oxide layer, which induces a negative drift in the Dirac voltage. Introducing defects and increased impurities at the gate oxide/graphene interface after proton irradiation resulted in enhanced Coulomb scattering and reduced mobility of the carriers, which in turn affects the Dirac sheet resistance and saturation current. After annealing at room temperature, the electrical characteristics of the devices were partially restored. The results of the technical computer-aided design (TCAD) simulation indicate that the reduction in carrier mobility is the main reason for the degradation of the electrical performance of the device. Monte Carlo simulations were conducted to determine the ionization and nonionization energy losses induced by proton incidence in top-gate GFET devices. The simulation data show that the ionization energy loss is the primary cause of the degradation of the electrical performance.

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“…18,22 For example, gamma exposure can reduce graphene-based transistor performance as can Xray, or ion irradiation. 6,22,23 However, it remains unclear, whether these changes occur owing to damage within the graphene or the surrounding device structure (i.e., substrate, dielectric, passivation layers). The former suggests a fundamental constraint for the use of graphene as a radiation sensor whereas the latter can be overcome with the traditional means of radiation hardening developed for microelectronics in general.…”

Section: Introductionmentioning

confidence: 99%

Detection of High Energy Ionizing Radiation using Deeply Depleted Graphene-Oxide-Semiconductor Junctions

Ruiz¹,

Vizkelethy²,

McDonald³

et al. 2022

Preprint

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Graphene's linear band structure and two-dimensional density of states provide an implicit advantage for sensing charge. Here, these advantages are leveraged in a deeply depleted graphene-oxide-semiconductor (D 2 GOS ) junction detector architecture to sense carriers created by ionizing radiation. Specifically, the room temperature response of a silicon-based D 2 GOS junction is analyzed during irradiation with 20 MeV Si 4+ ions. Detection was demonstrated for doses ranging from 12-1200 ions with device functionality maintained with no substantive degradation. To understand the device response, D 2 GOS pixels were characterized post-irradiation via a combination of electrical characterization, Raman spectroscopy, and photocurrent mapping. This combined characterization methodology underscores the lack of discernible damage caused by irradiation to the graphene while highlighting the nature of interactions between the incident ions and the silicon absorber.

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Effects of Proton and X-ray Irradiation on Graphene Field-Effect Transistors with Thin Gate Dielectrics

Cited by 12 publications

References 34 publications

Radiation tolerance of two-dimensional material-based devices for space applications

Radiation tolerance of two-dimensional material-based devices for space applications

Study of High-Energy Proton Irradiation Effects in Top-Gate Graphene Field-Effect Transistors

Detection of High Energy Ionizing Radiation using Deeply Depleted Graphene-Oxide-Semiconductor Junctions

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