Effects of Rapid Thermal Annealing on the Structural, Optical, and Electrical Properties of Au/CuPc/n-Si (MPS)-type Schottky Barrier Diodes

Reddy, P.R. Sekhar; Janardhanam, V.; Reddy, V. Rajagopal; Park, Min Hyuk; Choi, Chel‐Jong

doi:10.1007/s00339-021-04945-4

Cited by 13 publications

(4 citation statements)

References 54 publications

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“…The slope (S) of the curve is labeled by S1, S2, and S3 was observed. In the low voltage region, the I-V characteristics exhibits ohmic conduction (I ∝ V) with a S1 ~1 due to the density of thermally generated free carriers is greater than the density of injected charge carriers [15,16]. In the HRS region, the device has a relatively high resistance, and the current flow is relatively small.…”

Section: Resultsmentioning

confidence: 99%

Structural and electrical characteristics of Zr-doped HfO2 (HZO) thin films deposited by atomic layer deposition for RRAM applications

Reddy

2024

Mater. Tech. Rep.

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In this study, Zr-doped HfO2 (HZO) based resistive random-access memory (RRAM) device were fabricated. The Hf:Zr (1:1) ratio in the HZO films were controlled by changing the HfO2 and ZrO2 cycle ratio during the atomic layer deposition (ALD) process. Next, we studied the structural and electrical properties of the Au/HZO/TiN RRAM device structure. The RRAM devices exhibits an excellent resistance ratio of the high resistance state (HRS) to the low resistance state (LRS) of ~103 A, and as well as good endurance (300 cycles) and retention (>103 s), respectively. Further, the device showed different conduction mechanism in LRS and HRS modes. The lower biased linear region is dominated by ohmic conductivity, whereas the higher biased nonlinear region is dominated by a space charge limited current conduction. This device is suitable for application in future high-density nonvolatile memory RRAM devices.

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Section: Resultsmentioning

confidence: 99%

Structural and electrical characteristics of Zr-doped HfO2 (HZO) thin films deposited by atomic layer deposition for RRAM applications

Reddy

2024

Mater. Tech. Rep.

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“…where "d" represents the film's thickness and "PF " and "SC" have their conventional meanings [34].…”

Section: Fig 5 Plot Of Dv/dln (I) and H (I) Versus I For The Mo/hfo2/...mentioning

confidence: 99%

Microstructural and Current-voltage Characteristics in Mo/HfO2/n‑Si Based Metal-Insulator-Semiconductor (MIS) Diode using Different Methods for Optoelectronic Device Applications

et al. 2024

IJFMR

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This paper investigates the effect of hafnium dioxide (HfO2) thin film as interlayer between the Mo and n-Si semiconductor on the electrical characteristics of the Mo/n-Si Schottky diode (SD). The X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) results confirmed that HfO2 films were formed on the n-Si semiconductors. The image from SEM and AFM displays that the deposited HfO2 thin film had a uniform appearance good smoothness of the surface. The smooth surfaces of the insulating layer strongly influence the electrical properties of the diode. The electrical properties of the Mo/HfO2/n-Si metal/insulator/semiconductor (MIS) diode were obtained via current-voltage (I-V) measurements in the voltage range from −3 V to +3 V at room temperature. A better rectifying ability and a reduced reverse leakage current were demonstrated by the MIS diode. The MIS dide's barrier height (Bh) and ideality factor value were calculated to be 0.85 eV and 1.21, respectively. The MIS diode was able to achieve a higher b, which allowed the HfO2 interlayer to change BH. The calculated BH values from the I-V, Hernandez, Cheung, and Norde approaches were comparable to one another, demonstrating their validity and consistency. The MIS diode's forward bias log (I) - log (V) curve demonstrated that it was ohmic in low-voltage regimes and that conduction was space-charge-limited in high-voltage regimes. However, for the MIS diode, the Poole-Frenkel and Schottky emissions are the dominant current conduction mechanisms in the lower and higher bias regions. These outcomes indicate that the HfO2 film can be chosen as dielectric materials in the construction of MIS devices.

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“…[1][2][3] In recent studies, MIS or MOS type structures have been created by growing organic materials between metal and semiconductor with different techniques. [4][5][6][7] In all these structures, the most basic electrical parameters of the structure are the ideality factor and the Schottky barrier height. As known, for the improvement of reliability and performance of the structures is highly important to produce high quality Schottky barrier diodes.…”

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confidence: 99%

The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Au/NAMA/n-Si Schottky Diodes

Tuğluoğlu

Pakma²,

Akın³

et al. 2023

ECS J. Solid State Sci. Technol.

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We report the results of temperature-dependent barrier properties of Au/NAMA/n-Si Schottky diode in the low temperature range of 80-330 K. The analysis results of thermionic emission theory showed that the barrier height decreases, and the ideality factor increases towards low temperatures, depend on the barrier height inhomogeneities. The obtained results show the presence of a double Gaussian distributions with standard deviations (σ_0) of 0.073 and 0.18 V and mean barrier height (Φ ̅_b0) values of 0.595 and 1.427 eV in the change of 80-140 and 160-330 K, respectively. Moreover, evaluation of the modified Richardson curve, the values of Richardson constant (A^*) of 321.805 and 110.935 A K-2 cm-2, and mean barrier height of 0.606 and 1.422 eV were found for the low- and high-temperature regions, respectively. The A^* value of 110.935 A K-2 cm-2 is close to the theoretical value of 112 A K-2 cm-2 for n-Si. These results proved that there is barrier inhomogeneity.

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Effects of Rapid Thermal Annealing on the Structural, Optical, and Electrical Properties of Au/CuPc/n-Si (MPS)-type Schottky Barrier Diodes

Cited by 13 publications

References 54 publications

Structural and electrical characteristics of Zr-doped HfO2 (HZO) thin films deposited by atomic layer deposition for RRAM applications

Structural and electrical characteristics of Zr-doped HfO2 (HZO) thin films deposited by atomic layer deposition for RRAM applications

Microstructural and Current-voltage Characteristics in Mo/HfO2/n‑Si Based Metal-Insulator-Semiconductor (MIS) Diode using Different Methods for Optoelectronic Device Applications

The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Au/NAMA/n-Si Schottky Diodes

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