Effects of S, Si, or Fe dopants on the diffusion of Zn in InP during MOCVD

Blaauw, C.; Emmerstorfer, B.; Kreller, David I.; Hobbs, L.; SpringThorpe, A. J.

doi:10.1007/bf02655833

Cited by 12 publications

(4 citation statements)

References 16 publications

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“…Equation ( 11) also indicates that the diffusion of zinc (and other similar acceptors) in InP would be expected to be much slower in n-type than in p-type material. There is good evidence to suggest that this is indeed the case [7,8].…”

Section: Fermi Level Fixed and Set By Another Dopantmentioning

confidence: 96%

Interaction of p-type dopants during diffusion in InP

Tuck¹,

Shepherd²,

Kelly³

et al. 2000

Semicond. Sci. Technol.

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Experiments are described in which zinc and cadmium diffuse together in InP and interact. When zinc is diffused into cadmium-doped InP, it is found that (1) the presence of cadmium increases the penetration depth of the zinc and (2) the presence of the diffusing zinc greatly increases the rate of out-diffusion of cadmium from the semiconductor. A model is proposed to explain this behaviour. It is suggested that both elements diffuse by a substitutional-interstitial mechanism and that the interaction between them is a consequence of both influencing the local concentration of holes. Simulations made using the model show good agreement with experiment.

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Section: Fermi Level Fixed and Set By Another Dopantmentioning

confidence: 96%

Interaction of p-type dopants during diffusion in InP

Tuck¹,

Shepherd²,

Kelly³

et al. 2000

Semicond. Sci. Technol.

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“…The Zn doping decreases abruptly to 8e16 cm −3 at the InP-SCH interface; the reason for this dip is unknown yet it has been observed on the SIMS characterization for two additional QWI samples. The Si doping inhibits the Zn diffusion for concentration of Zn below Si, which likely explains why the tail of the Zn diffusion does not extend into the lower cladding with 1e18 cm −3 Si, whereas the SCH with 3e16-1e17 cm −3 Si has a minimal effect [25]. The Zn diffusion is much greater for the implanted samples due to defect assisted diffusion.…”

Section: Resultsmentioning

confidence: 99%

Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation

et al. 2012

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We demonstrate a regrowth-free material platform to create monolithic InGaAsP/InP photonic integrated circuits (PICs) with high-gain active and low-loss passive sections via a PL detuning of >135 nm. We show 2.5 µm wide by 400 µm long semiconductor optical amplifiers with >40 dB/mm gain at 1570 nm, and passive waveguide losses <2.3 dB/mm. The bandgap in the passive section is detuned using low-energy 190 keV channelized phosphorous implantation and subsequent rapid thermal annealing to achieve impurity-induced quantum well intermixing (QWI). The PL wavelengths in the active and passive sections are 1553 and 1417 nm, respectively. Lasing wavelengths for 500 µm Fabry-Perot lasers are 1567 and 1453 nm, respectively.

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“…[4][5][6][7][8][9][10][11][12][13] The observation of enhanced Mg incorporation in the presence of the deep-donor oxygen thus suggests that oxygen may also influence Mg diffusion in these samples. In fact, further inspection of the SIMS data in Fig.…”

Section: Mg-oxygen Dopant Interactions In A1 05 In 05 Pmentioning

confidence: 89%

“…With regard to such properties, we have previously demonstrated that the deep donor, oxygen, enhances Mg incorporation in Al 0.5 In 0.5 P. 3 Similar to our previous observations regarding Mg-oxygen interactions in Al 0.5 In 0.5 P, various other research groups have reported that shallow-donor species, such as S or Si, have enhanced acceptor incorporation in III-V semiconductors. [4][5][6][7][8][9][10][11][12][13] In addition to enhancing acceptor incorporation, such shallow-donor species have also been shown to suppress acceptor diffusion in III-V semiconductors, [4][5][6][7][8][9][10][11][12][13] thus providing motivation to investigate the potential impact of the deep donor, oxygen, on Mg diffusion in Al 0.5 In 0.5 P. In addition to this investigation of Mg-oxygen dopant interactions in Al 0.5 In 0.5 P, we also consider donor-acceptor interactions between Mg and the shallow donors, Te, S, and Si, to allow the reader to more effectively compare our results on Mg-oxygen dopant interactions to previous reports on dopant interactions between shallow donors and Zn or Mg acceptors. To the best of our knowledge, this paper offers the first detailed study of donor-acceptor interactions in Al 0.5 In 0.5 P, and it is also the first report we are aware of that compares the effect of deep-donor species to those of shallow-donor species on acceptor incorporation and diffusion in III-V semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Donor-acceptor interactions in Al0.5In0.5P

Grillot

Stockman

Huang

et al. 2002

Journal of Elec Materi

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INTRODUCTIONWide-bandgap III-V semiconductors, such as Al 0.5 In 0.5 P, are technologically important due to their common use as carrier-confining layers in various devices, including (Al x Ga 1Ϫx ) 0.5 In 0.5 P laser diodes and light emitting diodes. 1,2 In order to more effectively optimize the performance of such devices, it is, therefore, important to develop a more complete understanding of both n-type and p-type doping of such wide-bandgap semiconductors. Thus, any growth parameters or impurity species that alter donor or acceptor incorporation or diffusion properties may have important implications on device design, and it is, therefore, important to thoroughly understand such effects. With regard to such properties, we have previously demonstrated that the deep donor, oxygen, enhances Mg incorporation in Al 0.5 In 0.5 P. 3 Similar to our previous observations regarding Mg-oxygen interactions in Al 0.5 In 0.5 P, various other research groups have reported that shallow-donor species, such as S or Si, have enhanced acceptor incorporation in III-V semiconductors. [4][5][6][7][8][9][10][11][12][13] In addition to enhancing acceptor incorporation, such shallow-donor species have also been shown to suppress acceptor diffusion in III-V semiconductors, 4-13 thus providing motivation to investigate the potential impact of the deep donor, oxygen, on Mg diffusion in Al 0.5 In 0.5 P. In addition to this investigation of Mg-oxygen dopant interactions in Al 0.5 In 0.5 P, we also consider donor-acceptor interactions between Mg and the shallow donors, Te, S, and Si, to allow the reader to more effectively compare our results on Mg-oxygen dopant interactions to previous reports on dopant interactions between shallow donors and Zn or Mg acceptors. To the best of our knowledge, this paper offers the first detailed study of donor-acceptor interactions in Al 0.5 In 0.5 P, and it is also the first report we are aware of that compares the effect of deep-donor species to those of shallow-donor species on acceptor incorporation and diffusion in III-V semiconductors.In addition to the potential effect of oxygen on Mg diffusion in Al 0.5 In 0.5 P, such investigations of Mgoxygen dopant interactions may have major consequences on the growth of Al-bearing compounds, such as Al x Ga 1Ϫx As, Al 0.5 In 0.5 P, and perhaps AlGaN as well, where unintentional oxygen incorporation is often a source of concern. For example, Mg is known Dopant interactions are considered between Mg-acceptor atoms and various donor species, including the deep donor; oxygen; and the shallow donors, Te, S, and Si, in Al 0.5 In 0.5 P. While each of these donor species is shown to suppress Mg diffusion and enhance Mg incorporation in Al 0.5 In 0.5 P, careful analysis of the concentration profiles for these various donor species reveals subtle differences in the shape of the donor and acceptor dopant profiles, suggesting subtle differences in both the type of donor-acceptor interactions involved and in the effectiveness of the various donor species at suppressing Mg ...

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Effects of S, Si, or Fe dopants on the diffusion of Zn in InP during MOCVD

Cited by 12 publications

References 16 publications

Interaction of p-type dopants during diffusion in InP

Interaction of p-type dopants during diffusion in InP

Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation

Donor-acceptor interactions in Al0.5In0.5P

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