Effects of sputtering pressure on properties of Al doped ZnO thin films dynamically deposited by rf magnetron sputtering

Zhou, Han; Zhang, H. Y.; Tan, Mingyi; Zhang, W. J.; Zhang, W. L.

doi:10.1179/1433075x12y.0000000002

Cited by 13 publications

(5 citation statements)

References 18 publications

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“…Tseng et al [101] also reported that the grain size of gallium-doped ZnO films by RF magnetron sputtering decreased with the sputtering pressure, as shown in figure 9. This was consistent with the results of Zhou et al [102] that the deposition rate and grain size of Al doped ZnO thin films deposited by RF magnetron sputtering typically decreased with the gas pressure. Seshan [89] found that the best deposition probability (highest) occurred for low pressure, short throw distances and a gas species that was lighter than the sputtered species, resulting in the best deposition rate at low pressure.…”

Section: Effects Of Different Gas Pressures On the Surface Roughness ...supporting

confidence: 93%

Effect of deposition parameters on surface roughness and consequent electromagnetic performance of capacitive RF MEMS switches: a review

Chen

Tian

Zhang

et al. 2017

J. Micromech. Microeng.

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Surface roughness seriously affects the electromagnetic performance of capacitive radio frequency (RF) micro-electromechanical system (MEMS) switches. This review presents the effects of different film thickness values, substrate topologies, sputtering powers, gas pressures, gas ratios, substrate temperatures and annealing temperatures on the surface roughness of deposited thin films. At the same time, the mechanisms of the deposition parameters on the surface roughness are also analyzed. The effects of surface roughness on the electromagnetic performance of capacitive RF MEMS switches are then discussed in detail. Finally, two different methods for improving the surface roughness of deposited thin films are given.

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Section: Effects Of Different Gas Pressures On the Surface Roughness ...supporting

confidence: 93%

Effect of deposition parameters on surface roughness and consequent electromagnetic performance of capacitive RF MEMS switches: a review

Chen

Tian

Zhang

et al. 2017

J. Micromech. Microeng.

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“…Furthermore, the growth rate per cycle of the AALD Al:ZnO films is 0.94 Å/cycle, corresponding to about 0.3 Å/s. This value is lower than that (0.5-3 Å/s) obtained by using sputter [28][29][30][31], but in terms of total deposition time, the AALD method would take more advantages since it does not require a vacuum environment. For example, for a 60 nm-thick Al:ZnO film, the AALD method takes about 40 min to finish the deposition, whereas the sputter technique may require more time as it needs to reach high degree of vacuum before deposition.…”

Section: Introductionmentioning

confidence: 64%

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Hsu

Geng

et al. 2020

Molecules

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In this study, aluminum-doped zinc oxide (Al:ZnO) thin films were grown by high-speed atmospheric atomic layer deposition (AALD), and the effects of air annealing on film properties are investigated. The experimental results show that the thermal annealing can significantly reduce the amount of oxygen vacancies defects as evidenced by X-ray photoelectron spectroscopy spectra due to the in-diffusion of oxygen from air to the films. As shown by X-ray diffraction, the annealing repairs the crystalline structure and releases the stress. The absorption coefficient of the films increases with the annealing temperature due to the increased density. The annealing temperature reaching 600 °C leads to relatively significant changes in grain size and band gap. From the results of band gap and Hall-effect measurements, the annealing temperature lower than 600 °C reduces the oxygen vacancies defects acting as shallow donors, while it is suspected that the annealing temperature higher than 600 °C can further remove the oxygen defects introduced mid-gap states.

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“…Similarly, for AZO films grown from a ceramic target the crystallite size increased from 8.7 to 17.7 nm for pressures ranging from 0.1 to 0.4 Pa. Moreover, Kim & Kim 14 reported crystallite sizes from 25.2 to 28.7 nm for pressures of 0.13 to 0.27 Pa. For the data of G-Berasategui et al 10 , Zhou et al 32 and Yue et al 20 grown at temperatures greater than 523K, the crystallite size is usually larger, between 30 to 70 nm.…”

Section: Composition and Structural Propertiesmentioning

confidence: 89%

“…Figure 4 shows the crystallite size as a function of the sputtering pressure. For comparison, we include several data published in the literature 10,14,20,32 . For reactive series, the crystallite size increased continuously from 8.2 to 17.3 nm for sputtering pressures ranging from 0.16 to 6.7 Pa.…”

Section: Composition and Structural Propertiesmentioning

confidence: 99%

Al-doping and Properties of AZO Thin Films Grown at Room Temperature: Sputtering Pressure Effect

et al. 2019

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Aluminum zinc oxide (AZO) thin films were synthesized on glass substrates by radio frequency (rf) magnetron sputtering from a metallic Zn-Al (5 at. %) target at room temperature. The morphological, structural, electrical and optical properties of the films were studied as a function of the sputtering pressure, which was varied from 0.1 to 6.7 Pa. X-ray diffraction (XRD) analyses revealed that the films obtained were polycrystalline, having a hexagonal wurtzite structure with a preferential orientation in the (002) plane. In addition, the crystallite size increased as a function of sputtering pressure. Owing to the re-sputtering of the Zn atoms from the growing film, the aluminum concentration presented a maximum value of 13 at. %. At pressures close to 0.16 Pa, we obtained films with values of electrical resistivity and mobility of 2.8 10-3 Ω cm and 17 cm 2 /Vs, respectively. Finally, our results indicate that the structure zone diagram proposed by Thornton and later modified by Kluth does not fully predict the structural/morphological behavior of the AZO films, since plasma interactions must also be taken into account. With the methodology used, transparent conductive electrodes can be deposited on substrates at low temperatures.

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Effects of sputtering pressure on properties of Al doped ZnO thin films dynamically deposited by rf magnetron sputtering

Cited by 13 publications

References 18 publications

Effect of deposition parameters on surface roughness and consequent electromagnetic performance of capacitive RF MEMS switches: a review

Effect of deposition parameters on surface roughness and consequent electromagnetic performance of capacitive RF MEMS switches: a review

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Al-doping and Properties of AZO Thin Films Grown at Room Temperature: Sputtering Pressure Effect

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