Effects of substrate temperature on resistive switching behavior of planar ZnO resistive random access memories

Hsu, Chih-Chieh; Ting, Wei-Chieh; Chen, Yuting

doi:10.1016/j.jallcom.2016.08.248

Cited by 21 publications

(7 citation statements)

References 60 publications

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“…Dongale et al [192] Employing the control of substrate temperature when doing the sputtering process is a moral way of regulating the V O content of ZnO film and enhancing the film's crystallization. Hsu et al [193] [193]. Similarly, Wu et al [194] show three different resistance states using two dissimilar sweep-voltages of 4 V and 5 V. They reveal the likelihood of obtaining a ZnO-based multi-bit RRAM device.…”

Section: Effect Of Deposition Parametersmentioning

confidence: 96%

“…Also, it demonstrates the possibility of controlling HRS/LRS via controlling the sweep-voltage. Furthermore, Hsu et al [193] shows in Fig. 16(a) and (b) lower conduction currents and stable device characteristics, but extremely high resistance is witnessed when the electrode's span distance was 80 µm and 320 o C substrate's temperature.…”

Section: Effect Of Deposition Parametersmentioning

confidence: 97%

“…16(a) and (b) lower conduction currents and stable device characteristics, but extremely high resistance is witnessed when the electrode's span distance was 80 µm and 320 o C substrate's temperature. Also, it reveals that the electrical characteristics for the lateral ZnO-based RRAM with the electrode's span of 10 µm cannot be realized when the temperature of the substrate is raised to 400 o C. It is worth noting that keeping the substrate temperature of 240 -320 o C proved to be useful for fabricating a planar-based ZnO device with an electrode's distance of 10 -250 µm [193]. Similarly, the effect of growth temperature on a ZnO-based RRAM device was demonstrated by Gupta et al [195], which indicates that the films show better crystalline conductivity, electron mobility, and its transparency increases with the increase in the deposition temperature.…”

Section: Effect Of Deposition Parametersmentioning

confidence: 99%

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ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

et al. 2021

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Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use of doping elements, multi-layered structures, suitable bottom and top electrodes, controlling the deposition materials, and the impact of hybrid structure for enhancing the switching dynamics are discussed. The potentials of ZnO-based RRAM for invisible and bendable devices are also covered. ZnO-based RRAM has the potential for possible application in bio-inspired cognitive computational systems. Thus, the synapse capability of ZnO is presented. The sneak-path current issue also besets ZnO-based RRAM crossbar array architecture. Hence, various attempts to subdue the bottleneck have been shown and discussed in this article. Interestingly, ZnO provides not only helpful memory features. However, it demonstrates the ability to be used in nonvolatile multifunctional memory devices. Also, this review covers various issues like the effect of electrodes, interfacial layers, proper switching layers, appropriate fabrication techniques, and proper annealing settings. These may offer a valuable understanding of the study and development of ZnO-based RRAM and should be an avenue for overcoming RRAM challenges.

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Section: Effect Of Deposition Parametersmentioning

confidence: 96%

Section: Effect Of Deposition Parametersmentioning

confidence: 97%

Section: Effect Of Deposition Parametersmentioning

confidence: 99%

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ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

et al. 2021

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“…Due to the interesting optical, electrical, and piezoelectric properties of zinc oxide [ 1 ] (ZnO), thin films of this material have been studied for a variety of applications such as piezoelectric generators [ 2 , 3 ], transparent conductive oxides [ 4 ], or resistance random access memories [ 5 ]. Introducing porosity to ZnO thin films opens up a plethora of new possibilities by virtue of the increased surface area.…”

Section: Introductionmentioning

confidence: 99%

Tuning the Porosity of Piezoelectric Zinc Oxide Thin Films Obtained from Molecular Layer-Deposited “Zincones”

Kräuter

Ali²,

Stadlober³

et al. 2022

Materials

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Porous zinc oxide (ZnO) thin films were synthesized via the calcination of molecular layer-deposited (MLD) “zincone” layers. The effect of the MLD process temperature (110 °C, 125 °C) and of the calcination temperature (340 °C, 400 °C, 500 °C) on the chemical, morphological, and crystallographic properties of the resulting ZnO was thoroughly investigated. Spectroscopic ellipsometry reveals that the thickness of the calcinated layers depends on the MLD temperature, resulting in 38–43% and 52–56% of remaining thickness for the 110 °C and 125 °C samples, respectively. Ellipsometric porosimetry shows that the open porosity of the ZnO thin films depends on the calcination temperature as well as on the MLD process temperature. The maximum open porosity of ZnO derived from zincone deposited at 110 °C ranges from 14.5% to 24%, rising with increasing calcination temperature. Compared with the 110 °C samples, the ZnO obtained from 125 °C zincone yields a higher porosity for low calcination temperatures, namely 18% for calcination at 340 °C; and up to 24% for calcination at 500 °C. Additionally, the porous ZnO thin films were subjected to piezoelectric measurements. The piezoelectric coefficient, d33, was determined to be 2.8 pC/N, demonstrating the potential of the porous ZnO as an, e.g., piezoelectric sensor or energy harvester.

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“…However, with the diversification of high performance ZnO-based RRAM devices, especially as more and more memory devices require higher storage density, faster read–write speed, a smaller storage unit, and higher integrated compatibility, it is in no doubt that the ZnO-based RRAM devices with low switching voltage, high I ON / I OFF ratio, and uniformity of switching parameters are being pursued [ 13 , 14 ]. To solve the above ZnO-based resistive switching devices problems, many researchers attempted to improve the resistive switching characteristics by doping methods.…”

Section: Introductionmentioning

confidence: 99%

Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory

et al. 2020

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In this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-doping concentrations was designed and fabricated by using a magnetron sputtering method. To determine how the Li-doping concentration affects the crystal lattice structure in the composite ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. The resistive switching behaviors of the resulting Pt/Ag/LZO/Pt devices, with different Li-doping contents, were studied under direct current (DC) and pulse voltages. The experimental results showed that compared with the devices doped with Li-8% and -10%, the ZnO based RRAM device doped by 5% Li-doping presented stable bipolar resistive switching behaviors with DC voltage, including a low switching voltage (<1.0 V), a high endurance (>103 cycles), long retention time (>104 s), and a large resistive switching window. In addition, quick switching between a high-resistance state (HRS) and a low-resistance state (LRS) was achieved at a pulse voltage. To investigate the resistive switching mechanism of the device, a conduction model was installed based on Ag conducting filament transmission. The study of the resulting Pt/Ag/LZO/Pt devices makes it possible to further improve the performance of RRAM devices.

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Effects of substrate temperature on resistive switching behavior of planar ZnO resistive random access memories

Cited by 21 publications

References 60 publications

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

Tuning the Porosity of Piezoelectric Zinc Oxide Thin Films Obtained from Molecular Layer-Deposited “Zincones”

Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory

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