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In this reported work, amorphous InGaZnO thin film transistors (TFTs) with symmetric and asymmetric structures are fabricated. A constant positive gate bias for a time of 1-5 × 10 4 s was then applied to the TFTs to investigate their performance variation. The mobilities of the TFTs were not significantly degraded by a long stress time of 5 × 10 4 s. Also, decreases of sub-threshold swing and off-state current were observed for a stress time of 10 4 s. Although significant threshold voltage variation was found for the a-IGZO TFT with a symmetric design during the stress test, it could be reduced by 56% for the TFT fabricated by the proposed asymmetric design.

In this work, a vertical triode consisting of an organic material CuPc and a metal oxide V2O5, was studied by using numerical simulations. The electrical characteristics of the triodes with V2O5 doping concentrations of 10 16 − 10 18 cm −3 and electrode work functions (WFs) of 4.4 − 5.1 eV were simulated. In addition, the corresponding physical mechanisms were investigated by quantitatively analyzing the energy band diagram, carrier distribution, injection and transports which were difficult to measure and obtain experimentally. The optimal triode performance was obtained for a doping concentration of V2O5 of 2 × 10 17 cm −3 and WFs of the emitter and the collector electrodes of 5.1 eV and 4.8 eV, respectively. The simulation results were reasonable when compared with experimental data reported by other groups.