Nearly similar molar ratio of in and Ga in indium gallium nitride (InGaN) /Si photocells prefers to match InGaN conduction level energy to Si valance energy band for ohmic contact between two cells. At high temperature fabrication process, InGaN-Si interface shows highly defecting prone. Considering those tussles, InGaN-based/Si-based doublejunction tandem solar cell was designed and fabricated. In₀.₄Ga₀.₆ N cell was fabricated on Si photocell by implementing AlN/SiO₂/Si₃N4 interlayers. Interlayer influence on quantum efficiency of InGaN cell was studied under ideal irradiance AM1.5 solar spectrum at 300°K. Because of insertion of interlayers between InGaN and Si; the gradual efficiency enhancement with respect to the overlayer h-GaN (a = 3.183 nm) plane lattice was found to 8.3%, 5.9% and 5.1% for AlN (a = 3.11 nm), for SiO₂ (a = 4.9 nm) and for Si₃N4 (a = 7.76 nm), respectively. AlN was found to be an excellent and SiO₂ as preferable interlayer compared with Si₃N4. Coherence (in-plane lattice matching) of nano-interlayer appears to reduce photonic electro-migration hurdle between InGaN and Si; therefore, progressive enrichment of efficiency was realized.