Effects of substrate temperature on the growth of C60 polycrystalline films by physical vapor deposition

Growth behavior of CuPc films by physical vapor deposition

“…For 140 °C < T sub < 320 °C, within the CSS region, E A = 740 meV is estimated. In these two surface-kinetics controlled regions, as T sub increases, not only the growth rate of the tubular layer increases, but also the surface morphology of the tubular structure becomes smoother [19][20][21][22]25], as shown in figures 2 and 3. For T sub > 320 °C, i.e., outside the CSS region and in the higher T sub bound, the growth rate then drops which indicates that the re-evaporation of the CuPc adhered molecules from the interface starts to play an important role.…”

“…In PVD, the source powder is held at a relatively higher enough source temperature T sou to allow the solid source to sublime into a vaporized phase (with a typical vapor pressure exceeds 10 -4 -10 -3 Torr to obtain a reasonable deposition rate). After transporting to a relatively lower substrate temperature T sub region by diffusion and advection, the actual vapor pressure can be larger than the corresponding equilibrium vapor pressure there, and a constitutional supersaturation (CSS) occurs [16,17,22]. Hence, a solid phase can be deposited on the sidewall of the growth chamber and/or on top of the substrate from a supersaturated vapor.…”

Multi-Scale Modeling of Bulk Heterojunctions for Organic Photovoltaic Applications

“…This follows the same trend as the experimental measurements (Chen. et al, 2001;Cheng et al, 2003), even though the exact grain lengths are smaller than the measured values as it is computationally too expensive to achieve device scale equilibration. However, the calculated radial distribution function (RDF) for the three morphologies are quite similar to each other and to the single crystal RDF ).…”

Preparation of Fullerene Polycrystalline Films on Different Substrates by Physical Vapor Deposition

“…Dozens of methods, 9,[11][12][13][14][15][16][17] e.g., electrophoretical depositions, 9) solvent evaporation, 11,12) physical vapor deposition, 13,14) molecular-beam epitaxy, 15) layer-by-layer assembly, 16) and Langmuir-Blodgett films 17) etc., were developed to prepare the fullerene films, and the morphology and structure of these as-prepared films were characterized by STM, AFM, LEEDS, XRD, XPS and various other spectroscopic techniques. Fullerene films are generally either in polycrystalline form or in fullerene cluster form, depending on the film preparation method.…”

“…Especially, the choice of substrates plays a crucial role, for example, C 60 epitaxial films are prepared with perfect layered substrates in the ultra-high vacuum conditions, 18) and polycrystalline films are prepared on highquality semiconductor or passivated surfactant-mediated substrates. 13,14) In fact, it is the fullerene-substrate interaction that determines the morphology and structures of fullerene films.…”