Effects of substrate temperature on the optical and electrical properties of Al:ZnO films

Fournier, Carrie; Bamiduro, O.; Mustafa, H.; Mundle, R.; Konda, R. B.; Williams, Frances; Pradhan, A. K.

doi:10.1088/0268-1242/23/8/085019

Cited by 44 publications

(28 citation statements)

References 24 publications

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“…25 On the other hand, heating in vacuum causes widening in the energy band gap as a result of electrons release following Burstein-Moss effect. 26 It means oxygen evolution during annealing in vacuum raises the Fermi-level upwards by partially filling the conduction band gap and leads to increase in the band gap. The electrons donated by aluminum and those left behind by oxygen ions via desorption as molecules seem to be different and of opposite nature with regard to changes in the band gap.…”

Section: Optical Behaviormentioning

confidence: 99%

Effect of aluminum addition on the optical, morphology and electrical behavior of spin coated zinc oxide thin films

Srivastava

Kumar

2011

AIP Advances

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Aluminum-doped ZnO thin films of high optical transmittance (∼ 84-100%) and low resistivity (∼ 2.3x10-2 Ωcm) have been prepared on glass substrate by the spin coating and subsequent annealing at 500°C for 1h in air or vacuum. Effect of aluminum doping and annealing environment on morphology, optical transmittance and electrical resistivity of ZnO thin films has been studied with possible application as a transparent electrode in photovoltaic. The changes occurring due to aluminum addition include reduction in grain size, root mean square roughness, peak-valley separation, and sheet resistance with improvement in the optical transmittance to 84-100% in the visible range. The origin of low electrical resistivity lies in increase in i) electron concentration following aluminum doping (being trivalent), formation of oxygen vacancies due to vacuum annealing, filling of cation site with additional zinc at solution stage itself and ii) carrier mobility

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Section: Optical Behaviormentioning

confidence: 99%

Effect of aluminum addition on the optical, morphology and electrical behavior of spin coated zinc oxide thin films

Srivastava

Kumar

2011

AIP Advances

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“…The band gap decreases from 3.76 to 3.72 eV as T s increases from 400 to 500 C, this in contrast to our previous report on AZO grown the pulsed laser deposition technique. 22 Fig . 6 shows the effect of T s on the temperature dependence of electrical resistivity for AZO films.…”

Section: Resultsmentioning

confidence: 99%

Influence of growth temperature on electrical, optical, and plasmonic properties of aluminum:zinc oxide films grown by radio frequency magnetron sputtering

Dondapati

Santiago

Pradhan

2013

Journal of Applied Physics

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We have investigated the responsible mechanism for the observation of metallic conductivity at room temperature and metal-semiconductor transition (MST) at lower temperatures for aluminum-doped zinc oxide (AZO) films. AZO films were grown on glass substrates by radio-frequency magnetron sputtering with varying substrate temperatures (T s ). The films were found to be crystalline with the electrical resistivity close to 1.1 Â 10 À3 X cm and transmittance more than 85% in the visible region. The saturated optical band gap of 3.76 eV was observed for the sample grown at T s of 400 C, however, a slight decrease in the bandgap was noticed above 400 C, which can be explained by Burstein-Moss effect. Temperature dependent resistivity measurements of these highly conducting and transparent films showed a MST at $110 K. The observed metal-like and metal-semiconductor transitions are explained by taking into account the Mott phase transition and localization effects due to defects. All AZO films demonstrate crossover in permittivity from positive to negative and low loss in the near-infrared region, illustrating its applications for plasmonic metamaterials, including waveguides for near infrared telecommunication region. Based on the results presented in this study, the low electrical resistivity and high optical transmittance of AZO films suggested a possibility for the application in the flexible electronic devices, such as transparent conducting oxide film on LEDs, solar cells, and touch panels. V C 2013 AIP Publishing LLC. [http://dx

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“…By adding Al, the carrier concentration of ZnO nanostructures were improved because the substitution of Al 3+ at the Zn 2+ site created an extra free carrier in the process (Mridha & Basak, 2007, Fournier et al, 2008. Because of the high electron concentration, this condition reduced the barrier height between the Al-doped ZnO nanorod and the seed layer and between the film and the Al metal contact interface.…”

Section: Aluminium Doping Effectsmentioning

confidence: 99%

ZnO Nanorod Arrays Synthesised Using Ultrasonic-Assisted Sol-Gel and Immersion Methods for Ultraviolet Photoconductive Sensor Applications

Mamat¹,

Khusaimi²,

Musa³

et al. 2012

Nanorods

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Effects of substrate temperature on the optical and electrical properties of Al:ZnO films

Cited by 44 publications

References 24 publications

Effect of aluminum addition on the optical, morphology and electrical behavior of spin coated zinc oxide thin films

Effect of aluminum addition on the optical, morphology and electrical behavior of spin coated zinc oxide thin films

Influence of growth temperature on electrical, optical, and plasmonic properties of aluminum:zinc oxide films grown by radio frequency magnetron sputtering

ZnO Nanorod Arrays Synthesised Using Ultrasonic-Assisted Sol-Gel and Immersion Methods for Ultraviolet Photoconductive Sensor Applications

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