Effects of sulfurization time and H 2 S concentration on electrical properties of Cu 2 ZnSnS 4 films prepared by sol–gel method

Long, Bo; Cheng, Shuying; Qiao, Zheng; Yu, Jinling; Jia, Hongjie

doi:10.1016/j.materresbull.2015.08.017

Cited by 22 publications

(5 citation statements)

References 27 publications

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“…As thiourea concentration rises from 0.6 to 0.8 M, the hole concentration and conductivity of the p-type CZTS thin film increase because of reduction of V S concentration. However, further increase in thiourea concentration would reduce the hole concentration and conductivity possible due to the formation of ZnS [32]. …”

Section: Resultsmentioning

confidence: 99%

Copper-Zinc-Tin-Sulfur Thin Film Using Spin-Coating Technology

et al. 2016

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Cu 2 ZnSnS 4 (CZTS) thin films were deposited on glass substrates by using spin-coating and an annealing process, which can improve the crystallinity and morphology of the thin films. The grain size, optical gap, and atomic contents of copper (Cu), zinc (Zn), tin (Sn), and sulfur (S) in a CZTS thin film absorber relate to the concentrations of aqueous precursor solutions containing copper chloride (CuCl 2 ), zinc chloride (ZnCl 2 ), tin chloride (SnCl 2 ), and thiourea (SC(NH 2 ) 2 ), whereas the electrical properties of CZTS thin films depend on the annealing temperature and the atomic content ratios of Cu/(Zn + Sn) and Zn/Sn. All of the CZTS films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDXS), Raman spectroscopy, and Hall measurements. Furthermore, CZTS thin film was deposited on an n-type silicon substrate by using spin-coating to form an Mo/p-CZTS/n-Si/Al heterostructured solar cell. The p-CZTS/n-Si heterostructured solar cell showed a conversion efficiency of 1.13% with V oc = 520 mV, J sc = 3.28 mA/cm 2 , and fill-factor (FF) = 66%.

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Section: Resultsmentioning

confidence: 99%

Copper-Zinc-Tin-Sulfur Thin Film Using Spin-Coating Technology

et al. 2016

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“…The CZTS thin films with a thickness of 800 nm were fabricated on floating glass (FG) substrates by sol-gel method, followed by sulphurization in an N 2 + H 2 S gas atmosphere (with 5% H 2 S concentration) at 580 • C for one hour. [10] The buffer layers In 2 S 3 with a thickness of 5 nm were deposited onto the CZTS thin films by thermal evaporation method in DMDE-450 deposition equipment. The substrate temperature during the deposition of In 2 S 3 was chosen to be 30 (room temperature), 100, 150, and 200 • C, respectively.…”

Section: Methodsmentioning

confidence: 99%

Effect of deposited temperatures of the buffer layer on the band offset of CZTS/In ₂ S ₃ heterostructure and its solar cell performance

Zheng

Dong

et al. 2017

Chinese Phys. B

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The effect of the deposition temperature of the buffer layer In 2 S 3 on the band alignment of CZTS/In 2 S 3 heterostructures and the solar cell performance have been investigated. The In 2 S 3 films are prepared by thermal evaporation method at temperatures of 30, 100, 150, and 200 • C, respectively. By using x-ray photoelectron spectroscopy (XPS), the valence band offsets (VBO) are determined to be −0.28 ± 0.1, −0.28 ± 0.1, −0.34 ± 0.1, and −0.42 ± 0.1 eV for the CZTS/In 2 S 3 heterostructures deposited at 30, 100, 150, and 200 • C, respectively, and the corresponding conduction band offsets (CBO) are found to be 0.3 ± 0.1, 0.41 ± 0.1, 0.22 ± 0.1, and 0.01 ± 0.1 eV, respectively. The XPS study also reveals that interdiffusion of In and Cu occurs at the interface of the heterostructures, which is especially serious at 200 • C leading to large amount of interface defects or the formation of CuInS 2 phase at the interface. The CZTS solar cell with the buffer layer In 2 S 3 deposited at 150 • C shows the best performance due to the proper CBO value at the heterostructure interface and the improved crystal quality of In 2 S 3 film induced by the appropriate deposition temperature. The device prepared at 100 • C presents the poorest performance owing to too high a value of CBO. It is demonstrated that the deposition temperature is a crucial parameter to control the quality of the solar cells.

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“…A chelating agent is also added to the solution to increase the stability of the ion-complex. The sol is then either spin-coated or stirred to form a liquid film on the substrate [47,48]. Then, it is dried in air to remove residual organic materials.…”

Section: International Journal Of Photoenergymentioning

confidence: 99%

A Status Review on Cu₂ZnSn(S, Se)₄-Based Thin-Film Solar Cells

Saha

2020

International Journal of Photoenergy

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Photovoltaics has become a significant branch of next-generation sustainable energy production. Kesterite Cu2ZnSn(S, Se)4 (copper-zinc-tin-(sulfur, selenium) or CZTS(Se)) is considered one of the most promising, earth-abundant, and nontoxic candidates for solar energy generation over the last decade. However, shallow phase stability of the quaternary phase and the presence of various secondary phases and defects are the main hindrances in achieving the target device performance. This paper summarizes various approaches to synthesize the CZTS absorber layer and the CdS n-type material layer. Besides, different CZTS solar cell device structures, as well as a comprehensive review of secondary phases and defects, have been illustrated and discussed. At last, this review is intended to highlight the current challenges and prospects of CZTS solar cells.

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Effects of sulfurization time and H 2 S concentration on electrical properties of Cu 2 ZnSnS 4 films prepared by sol–gel method

Cited by 22 publications

References 27 publications

Copper-Zinc-Tin-Sulfur Thin Film Using Spin-Coating Technology

Copper-Zinc-Tin-Sulfur Thin Film Using Spin-Coating Technology

Effect of deposited temperatures of the buffer layer on the band offset of CZTS/In ₂ S ₃ heterostructure and its solar cell performance

A Status Review on Cu₂ZnSn(S, Se)₄-Based Thin-Film Solar Cells

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Effects of sulfurization time and H 2 S concentration on electrical properties of Cu 2 ZnSnS 4 films prepared by sol–gel method

Cited by 22 publications

References 27 publications

Copper-Zinc-Tin-Sulfur Thin Film Using Spin-Coating Technology

Copper-Zinc-Tin-Sulfur Thin Film Using Spin-Coating Technology

Effect of deposited temperatures of the buffer layer on the band offset of CZTS/In 2 S 3 heterostructure and its solar cell performance

A Status Review on Cu2ZnSn(S, Se)4-Based Thin-Film Solar Cells

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Product

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Effect of deposited temperatures of the buffer layer on the band offset of CZTS/In ₂ S ₃ heterostructure and its solar cell performance

A Status Review on Cu₂ZnSn(S, Se)₄-Based Thin-Film Solar Cells