Effects of surface treatments using PECVD-grown hexamethyldisiloxane on the performance of organic thin-film transistor

Low-temperature-processed (<100 °C) organic thin-film transistor using hollow-cathode CVD SiO2as the gate insulator

“…where μ FE is the field-effect mobility, C OX is the capacitance density of the gate insulator, V TH is the threshold voltage, The OTFTs fabricated below 100 • C showed a field-effect mobility (μ FE ) of 2.3 × 10 −2 cm 2 V −1 s −1 , a threshold voltage (V TH ) of −2.9 V, a sub-threshold swing (SS) of 0.516 V/decade and an on/off current ratio (I on /I off ) of 1.27 × 10 5 at V DS of −10 V. Normally, the OTFT performances, particularly the carrier mobility and on-current, can be strongly influenced by the grain size of the semiconductor [17][18][19][20]. The large grains can decrease the carrier scattering during carrier transport to result in good device performances.…”