Effects of temperature and deposition time on the structural and optical properties of Si1−Ge nanoparticles grown by low pressure chemical vapor deposition

Effect of rapid thermal annealing on crystallization and stress relaxation of SiGe nanoparticles deposited by ICP PECVD

“…The remaining peaks located respectively at z280 cm À1 , z400 cm À1 , and z480 cm À1 correspond to the atomic vibrations of the Ge-Ge, Si-Ge and Si-Si bonds, respectively (transverse optic vibration modes). From these spectra, the composition of Si 1Àx Ge x compound and the strain relaxation of the layers were extracted using the Tsang's model [27][28][29] using Si-Si and Si-Ge peaks positions according to the eqn (1) and 2:…”

Hidden State of Si50Ge50 Nanoparticles During Rapid Solidification

“…Sultan 12 dicussed the annealing temperature and time to control the formation conditions of nanoparticles to improve the photosensitivity of the SiO 2 /SiGe/SiO 2 multilayer structure. Besides, Mederos 13 found that by adjusting the size and density of SiGe nanoparticles, the luminous intensity of optoelectronic devices can be changed.…”

“…Although SiGe nanoparticles have been prepared in laboratory by various methods. However, most of the experiments mainly focus on the influence of preparation conditions on the size, shape, and crystallinity of SiGe nanoparticles and the effect of the structure on the optical and electrical properties of the material/device. − Upadhyay studied the doping of SiGe nanoparticles with different concentrations in CrSi 2 and found that doping an appropriate amount of SiGe nanoparticles will increase the carrier concentration and reduce the thermal conductivity. Sultan dicussed the annealing temperature and time to control the formation conditions of nanoparticles to improve the photosensitivity of the SiO 2 /SiGe/SiO 2 multilayer structure.…”