Effects of thermal annealing on porous silicon photoluminescence dynamics

Abstract

Photoluminescence (PL) spectra and decay dynamics were studied for the spontaneously oxidized porous Si with subsequent various thermal annealing procedures. The PL decay was highly nonexponential and well described by the stretched-exponential function. The PL lifetime was shorter for the higher PL photon energy, but at the same photon energy it decreased by an order of magnitude by the thermal annealing in N2 gas, in parallel with the large PL intensity decrease. This PL quenching upon the annealing is presumably ascribable to both the structural changes and dangling bond formations in porous Si, as suggested by ESR measurements and the annealing experiments in H2 gas.

Monte Carlo simulations of the recombination dynamics in porous silicon

“…[43] Annealing treatments induce a quenching of the room temperature luminescence with a decrease in the values of τ and β. [14] Within our model, this is simulated by diminishing…”

Time-resolved photoluminescence study of stabilised iron–porous silicon nanocomposites

“…Nevertheless, time-resolved photoluminescence spectroscopy (TRPL) of PS has been extensively studied [2][3][4][5] and some workers have reported that at room temperature the PL decay time ( ) depended strongly on wavelength detection ( ) [6][7][8][9]: decreases with decreasing . For example is 45 s at 700 nm and 5 s at 550 nm [9].…”

Porous Silicon - New Luminescent Material or Luminescent Defect?

“…Within "slow" decays, lower energy portion of photoluminescence corresponds to slower decay (small β) and it has narrower distribution of lifetime, i.e. larger γ [16].…”