2000 IEEE Ultrasonics Symposium. Proceedings. An International Symposium (Cat. No.00CH37121)
DOI: 10.1109/ultsym.2000.921494
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Effects of uniaxial stress and DC bias field on the piezoelectric, dielectric, and elastic properties of piezoelectric ceramics

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Cited by 15 publications
(15 citation statements)
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“…Stress-induced depinning of the domain walls is expected to occur under the applied compressive pre-stress. As depicted in Figures 2 and 4, an increase in domain wall mobility clearly enhances the dielectric loss tangent in some compositions, while the de-aging in the materials normally causes the decrease of the dielectric loss tangent observed in some compositions [23,24].…”
Section: Resultsmentioning
confidence: 92%
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“…Stress-induced depinning of the domain walls is expected to occur under the applied compressive pre-stress. As depicted in Figures 2 and 4, an increase in domain wall mobility clearly enhances the dielectric loss tangent in some compositions, while the de-aging in the materials normally causes the decrease of the dielectric loss tangent observed in some compositions [23,24].…”
Section: Resultsmentioning
confidence: 92%
“…Normally, the properties of ferroelectric materials are derived from both the intrinsic Downloaded by [New York University] at 20:01 28 May 2015 contribution, which is the response from a single domain, and extrinsic contributions, which are from domain wall motions [5,23,24]. When a mechanical stress is applied to a ferroelectric material, the domain structure in the material will change to maintain the domain energy at a minimum; during this process some of the domains engulf other domains or change shape irreversibly.…”
Section: Resultsmentioning
confidence: 99%
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“…The equivalent parameters of the embedded piezoelectric ceramic are monitored by a network analyzer through a pi network jig which is used to calibrate the measurement. The mechanism of characteristics change of piezoelectric materials caused by stress has been discussed based on different theories including domain wall motion [19], [22], domain boundaries and point defects [23], [24], equivalent method [25]. In the stress experiments, the changes of characteristics of embedded piezoelectric ceramic are observed through equivalent parameters measured by the network analyzer.…”
Section: A Stress Experimentsmentioning
confidence: 99%
“…In Ref. [9][10][11][12], the authors shows that residual stress (up to 48 MPa) development during processing of sol-gel derived ferroelectric thin films or on ferroelectric thin films patterning (up to 1500 MPa) can significantly changes strain hysteresis loops or electromechanical properties. The effects of mechanical stresses (up to 300 MPa) applied on lead zirconate titanate piezoceramics are also experimentally studied in [13][14][15][16], and these publication show a non-linear behaviour of the dielectric, elastic and piezoelectric constants.…”
Section: Introductionmentioning
confidence: 99%