Effects of Unusual Gate Current on the Electrical Properties of Oxide Thin-Film Transistors

Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

doi:10.1038/s41598-018-32233-4

Cited by 18 publications

(15 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…have introduced the outstanding MIOS diode properties such as high rectifying ratio and low leakage current that overcome the disadvantages of conventional p-n junction diodes and Schottky diodes 5 . However, these early-stage MIOS diodes are highly dependent on the semiconductor area used for the cathode 6 . In order to apply MIOS diodes to the TFD in earnest, rigorous mechanism analysis of charge carrier transport through the insulator is required in addition to an accurate understanding of the insulator characteristics during device operation.…”

Section: Introductionmentioning

confidence: 99%

Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator

Lee

Park

Cho

et al. 2019

Sci Rep

Self Cite

View full text Add to dashboard Cite

In a MIS (Metal/Insulator/Semiconductor) structure consisting of two terminals, a systematic analysis of the electrical charge transport mechanism through an insulator is essential for advanced electronic application devices such as next-generation memories based on resistance differences. Herein, we have verified the charge transfer phenomenon in MIOS (Metal/Insulator/Oxide Semiconductor) diodes through a defect engineering of the insulator. By selectively generating the oxygen vacancies in the insulator (Al 2 O 3 ), the MIOS diode rectification of the P ++ -Si anode/Al 2 O 3 /IGZO cathode reached 10 7 at 1.8 V and considerably suppressed the leakage current. Studying the current-voltage characteristics of MIOS diodes shows that the charge carrier transport mechanism can vary depending on the defect density as well as the difference between the CBM (conduction band minimum) of the semiconductor and the oxygen vacancy energy level of the insulator.

show abstract

Section: Introductionmentioning

confidence: 99%

Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator

Lee

Park

Cho

et al. 2019

Sci Rep

Self Cite

View full text Add to dashboard Cite

show abstract

“…The results might be caused by the fringe effect originated from unpatterned semiconductor active layers and gate electrodes. In general, the fringe effect can negatively influence the electrical characteristics, showing parasitic capacitance, gate leakage current, and off-current increased [ 44 , 45 ]. As a result, the corresponding amplitude under the dynamic response test might be slightly fluctuated by the undesirable operation of the FTPS devices originated from the fringe effect.…”

Section: Resultsmentioning

confidence: 99%

Highly-Sensitive Textile Pressure Sensors Enabled by Suspended-Type All Carbon Nanotube Fiber Transistor Architecture

Heo

Lee

et al. 2020

Micromachines

View full text Add to dashboard Cite

Among various wearable health-monitoring electronics, electronic textiles (e-textiles) have been considered as an appropriate alternative for a convenient self-diagnosis approach. However, for the realization of the wearable e-textiles capable of detecting subtle human physiological signals, the low-sensing performances still remain as a challenge. In this study, a fiber transistor-type ultra-sensitive pressure sensor (FTPS) with a new architecture that is thread-like suspended dry-spun carbon nanotube (CNT) fiber source (S)/drain (D) electrodes is proposed as the first proof of concept for the detection of very low-pressure stimuli. As a result, the pressure sensor shows an ultra-high sensitivity of ~3050 Pa−1 and a response/recovery time of 258/114 ms in the very low-pressure range of <300 Pa as the fiber transistor was operated in the linear region (VDS = −0.1 V). Also, it was observed that the pressure-sensing characteristics are highly dependent on the contact pressure between the top CNT fiber S/D electrodes and the single-walled carbon nanotubes (SWCNTs) channel layer due to the air-gap made by the suspended S/D electrode fibers on the channel layers of fiber transistors. Furthermore, due to their remarkable sensitivity in the low-pressure range, an acoustic wave that has a very tiny pressure could be detected using the FTPS.

show abstract

“…Aluminum (Al) was chosen for the electrodes and deposited through a thermal evaporator using a shadow mask because this metallization process has been widely used for source/drain electrodes and exhibits excellent electrical properties. Finally, the IGZO film was etched by dilute phosphoric acid to define the active areas while the channel area was protected with polyimide tape and reduce excessive gate leakage current [12,22]. For an additional passivation layer on the IGZO film, PMMA (950 PMMA C4, Micro Chemical, USA) was used by spin coating.…”

Section: Methodsmentioning

confidence: 99%

Influence of metallization process on solution-processed InGaZnO thin film transistors

Kim¹,

Lee²,

Hong³

et al. 2021

Nanotechnology

View full text Add to dashboard Cite

Low-temperature solution-processed InGaZnO (IGZO) thin film transistors (TFTs) have recently attracted significant attention as the next-generation flexible display TFTs, owing to their high transparency, high electrical performance, low-cost fabrication, and large-area scalability. However, solution-processed amorphous IGZO TFTs have several drawbacks, such as poor film quality or low stability, and have been studied with view to improving the device performance. One of the critical components determining device characteristics is the metallization process, which we systematically studied using aluminum (Al) source and drain electrodes. The electrical properties were measured for different channel lengths and evaluated using the threshold voltage (V th ) and subthreshold swing (SS). Al electrodes directly affect the channel region, enhancing the electron density because of the doping effect from Al and oxygen vacancy-related oxidation of Al and causing an abnormal negative shift of V th , which is confirmed by the component analysis via various spectroscopies. To understand and improve the TFT characteristics, we conducted a low-temperature post-annealing process and polymer passivation and succeeded in moving V th from over 150 V to near 0 V and remarkably improved SS. This study discovered that the influence of source-drain metallization on the channel region determines the device characteristics through the close relation between metal oxidation and the number of oxygen vacancies.

show abstract

Effects of Unusual Gate Current on the Electrical Properties of Oxide Thin-Film Transistors

Cited by 18 publications

References 38 publications

Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator

Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator

Highly-Sensitive Textile Pressure Sensors Enabled by Suspended-Type All Carbon Nanotube Fiber Transistor Architecture

Influence of metallization process on solution-processed InGaZnO thin film transistors

Contact Info

Product

Resources

About