Effects of Zn Doped Mesa Sidewall on Gain Enhanced InGaAs/InP Heterobipolar Phototransistor

Ogura, Mutsuo; Choi, Seongim; Furue, S.; Hayama, N.; Nishida, Kentaro

doi:10.1109/jqe.2009.2031121

Cited by 5 publications

(3 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Heterojunction phototransistors (HPT's) are alternatives to the PIN detectors and APD's for they are able to detect, amplify, or mix the microwave or millimeter-wave sub-carrier [3,4] . Hence, they are capable of satisfying the photo-detector requirements of a modern fiber communication system [5,6] .…”

Section: Introductionmentioning

confidence: 99%

High-Frequency InP-InGaAsP Heterojunction Phototransistor Employing a UTC Structure

Jiang

Xie

Zhang

et al. 2015

KEM

View full text Add to dashboard Cite

In this paper, the working mechanism and high characteristics of an InP/InGaAsP uni-traveling-carrier (UTC) double hetero-junction phototransistor (DHPT) has been analyzed. The UTC-DHPT employs a heavy doping base and two hetero-junctions to realize UTC structure to ease the contract between HPT responsivity and HPT working speed. Optical responsivity and optical transit frequency are analyzed physically through illustrated several kinds of paramistic capacitors in BE junction and BC junction under different electrical bias, optical bias and combined electrical and optical bias in this work. The results show that three-terminal (3T) working mode with combined electrical bias and optical bias in base achieves a highest maxim fT of 120GHz at collector current of 30mA and keeps the same optical responsivity (37.5A/W) compared with two-terminal (2T) working mode.

show abstract

Section: Introductionmentioning

confidence: 99%

High-Frequency InP-InGaAsP Heterojunction Phototransistor Employing a UTC Structure

Jiang

Xie

Zhang

et al. 2015

KEM

View full text Add to dashboard Cite

show abstract

“…Moreover, InGaAs/InP transistor performance benefits from Zn doping [42,43]. Zn-based shell materials for InP NW heterostructures, however, are far less explored, and their combination with oxidic Zn-coatings has not been reported to the best of our knowledge.…”

Section: Introductionmentioning

confidence: 99%

“…Zn P-doping of InP [ 37 ] is in the focus of theoretical studies [ 38 , 39 ] and has been applied to tune its photoluminescent properties [ 40 ], as well as the spacing of twinning superlattices [ 41 ]. Moreover, InGaAs/InP transistor performance benefits from Zn doping [ 42 , 43 ]. Zn-based shell materials for InP NW heterostructures, however, are far less explored, and their combination with oxidic Zn-coatings has not been reported to the best of our knowledge.…”

Section: Introductionmentioning

confidence: 99%

Hydrazine-Assisted Formation of Indium Phosphide (InP)-Based Nanowires and Core-Shell Composites

et al. 2012

View full text Add to dashboard Cite

Indium phosphide nanowires (InP NWs) are accessible at 440 °C from a novel vapor phase deposition approach from crystalline InP sources in hydrazine atmospheres containing 3 mol % H2O. Uniform zinc blende (ZB) InP NWs with diameters around 20 nm and lengths up to several tens of micrometers are preferably deposited on Si substrates. InP particle sizes further increase with the deposition temperature. The straightforward protocol was extended on the one-step formation of new core-shell InP–Ga NWs from mixed InP/Ga source materials. Composite nanocables with diameters below 20 nm and shells of amorphous gallium oxide are obtained at low deposition temperatures around 350 °C. Furthermore, InP/Zn sources afford InP NWs with amorphous Zn/P/O-coatings at slightly higher temperatures (400 °C) from analogous setups. At 450 °C, the smooth outer layer of InP-Zn NWs is transformed into bead-shaped coatings. The novel combinations of the key semiconductor InP with isotropic insulator shell materials open up interesting application perspectives in nanoelectronics.

show abstract

Hole Injection Type InGaAs–InP Near Infrared Photo-FET (HI-FET)

Ogura

2010

IEEE J. Quantum Electron.

View full text Add to dashboard Cite

Effects of Zn Doped Mesa Sidewall on Gain Enhanced InGaAs/InP Heterobipolar Phototransistor

Cited by 5 publications

References 11 publications

High-Frequency InP-InGaAsP Heterojunction Phototransistor Employing a UTC Structure

High-Frequency InP-InGaAsP Heterojunction Phototransistor Employing a UTC Structure

Hydrazine-Assisted Formation of Indium Phosphide (InP)-Based Nanowires and Core-Shell Composites

Hole Injection Type InGaAs–InP Near Infrared Photo-FET (HI-FET)

Contact Info

Product

Resources

About