Efficient fabrication methodology of wide angle black silicon for energy harvesting applications

Abstract

In this paper, we report an easy and relatively cost effective fabrication technique of a wide band omnidirectional antireflective black silicon surface based on silicon nanowires (SiNWs).

Vertical silicon nanowire-based racetrack resonator optical sensor

“…5b with metal-assisted chemical etching (MACE) or laser excimer method. Figure 6 shows exemplary SEM images of such nanowires from our preliminary fabrication trials using the fabrication protocols detailed at [20][21][22] and [23] for MACE and laser excimer, respectively. In Fig.…”

MACE nano-texture process applicable for both single- and multi-crystalline diamond-wire sawn Si solar cells

“…One potential solution to overcome this texturing problem is to fabricate a nanostructure on the wafer surface. This nanostructure is commonly called "black silicon" (b-Si) because of the outstanding ability to enhance light absorption rendering the surface visibly black 19,20,21,22,23,24 . High-quality b-Si can be produced by laser texturing 25,26,27,28 and reactive ion etching (RIE) 2930,3132,33,3435 .…”

Broadband MIR harvester using silicon nanostructures

“…The advantage of the proposed structure lies mainly in being an ultra-broad band absorber based completely on one silicon material that absorbs light in a huge band in the MIR spectrum and could be easily fabricated. Silicon nanowires fabrication is well established in literature and could be done using lithography free and low-cost techniques such as metal assisted chemical etching and excimer laser making this structure feasible in terms of less fabrication complexity and low cost 14–16 . In addition, the diameters of the nanostructures used in this work are as small as several nanometers and with a maximum of 1.9 µm.…”