EFFICIENT GREEN ELECTROLUMINESCENCE IN NITROGEN-DOPED GaP <i>p-n</i> JUNCTIONS

Logan, R. A.; White, H. G.; Wiegmann, W.

doi:10.1063/1.1652543

Cited by 108 publications

(37 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Using nitrogen as an isoelectronic impurity, localized electronic states are formed at small N concentrations. This circumstance was primarily used in GaP:N, where electrons could be excited electrically into these localized states, forming a bound exciton state which could efficiently recombine radiatively [1]. Hence GaP:N was used as the active material for green light-emitting diodes (LEDs).…”

Section: Introduction 1evolution Of Nitrogen Incorporationmentioning

confidence: 99%

Optical properties of Ga(NAsP) lattice matched to Si

Karcher

Grüning

Klar

et al. 2009

Phys. Status Solidi (c)

View full text Add to dashboard Cite

III/V semiconductors containing dilute amounts of N exhibit remarkable features such as a strong increase of the effective mass of the electrons, a huge red‐shift of the band gap compared to the host material and a weak pressure dependence of the PL band position. We examined these features by studying the affect of N incorporation onto the band formation of the alloys Ga(NAs) and Ga(NP). The dispersion‐free N‐related impurity band interacts in a repulsive way with the conduction band of the host material. The novel As‐rich Ga(NAsP) alloy exhibits both the electronic as well as the mechanical properties to serve as an active laser material for III/V integration onto Si substrates. We studied the optical properties by means of photoluminescence, excitation and modulation spectroscopy as well as pressure dependence. Energies of the interband transitions within the MQW have been successfully simulated by a type I QW calculation, yielding a CB to VB offset ration of about 1:2. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Section: Introduction 1evolution Of Nitrogen Incorporationmentioning

confidence: 99%

Optical properties of Ga(NAsP) lattice matched to Si

Karcher

Grüning

Klar

et al. 2009

Phys. Status Solidi (c)

View full text Add to dashboard Cite

show abstract

“…[10][11][12] With slightly increasing N concentrations, N forms NN i pairs, which shift light emission wavelength from green to yellow. 13,14 With increasing N concentration, Baillargen et al pointed out that GaN x P 1Ϫx alloy (xу0.45%) was an indirect band-gap semiconductor because of the reduction of the photoluminescence ͑PL͒ intensity. 6 Bellaiche et al, however, using 512-atom supercell pseudopotential band structure calculations, predicted a transition from indirect to direct band gap at a N concentration of 3% for GaNP alloys.…”

mentioning

confidence: 99%

Effects of nitrogen on the band structure of GaNxP1−x alloys

Xin

Zhang

et al. 2000

Applied Physics Letters

149

View full text Add to dashboard Cite

We report that the incorporation of N in GaNxP1−x alloys (x⩾0.43%) leads to a direct band-gap behavior of GaNP. For N concentration lower than 0.43%, a series of sharp emission lines from the various N pair centers are observed for GaNP bulk layers. With increasing N concentration higher than 0.43%, a strong photoluminescence (PL) emission from GaNP bulk layers is observed at room temperature. While the PL peak redshifts with increasing N concentration to 3.1%, the PL intensity remains as intense. Absorption measurements show a direct band-gap behavior of GaNP alloys.

show abstract

“…For several decades gallium phosphide (GaP) and indium phosphide (InP) have been established as basic III-V compound semiconductor materials for electronic and optoelectronic applications [1][2][3]. Recently, the GaP(1 0 0) surface has gained renewed attention as the essential part of a III-V compound that is almost lattice matched to silicon substrates [4,5], while InP(1 0 0) has been employed as a substrate material and ingredient in a low-band gap tandem solar cell in order to increase the conversion efficiency of next generation multi junction solar cells [6,7].…”

Section: Introductionmentioning

confidence: 99%