Efficient Hot Electron Transfer in Quantum Dot-Sensitized Mesoporous Oxides at Room Temperature

Wang, Hai I.; Infante, Ivan; Brinck, Stephanie ten; Cánovas, Enrique; Bonn, Mischa

doi:10.1021/acs.nanolett.8b01981

Cited by 25 publications

(37 citation statements)

References 34 publications

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“…have shown the hot electron extraction from tetrapod shaped CdSe nanocrystals using femtosecond transient absorption spectroscopy. Wang et al . have monitored the hot electron transfer process from PbS QDs to SnO 2 .…”

Section: Hot Charge Carrier Extraction From Semiconductor Qdsmentioning

confidence: 99%

“…Jing et al [82] have shown the hot electron extraction from tetrapod shaped CdSe nanocrystals using femtosecond transient absorption spectroscopy. Wang et al [83] have monitored the hot electron transfer process from PbS QDs to SnO 2 . They have shown that the hot electron transfer efficiency is determined by a kinetic competition between hot electron transfer rate (K HET ) and the thermalization rate (K TH ).…”

Section: Hot Charge Carrier Extraction From Semiconductor Qdsmentioning

confidence: 99%

“…The solid lines are biexponential fits based on hot and cold electron transfer (CET). (reproduced from ref [83]…”

mentioning

confidence: 99%

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Hot Charge Carriers in Quantum Dots: Generation, Relaxation, Extraction, and Applications

Singhal

Ghosh

2019

ChemNanoMat

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This article discusses the hot charge carriers in semiconductor quantum dots (QDs): their generation, relaxation, extraction and applications in different technologically relevant areas. It has been reported that the most common ways to generate hot charge carriers are photo‐excitation by energy more than the band gap energy. However, recently the other means to generate hot charge carriers such as doping, and semiconductor plasmon interaction have also been evolved and their advantages over the conventional method have been discussed. Relaxation dynamics of hot charge carriers and different processes related to this such as multiple exciton generation, Auger recombination, phonon vibrations and ligand assisted charge carrier relaxation are mentioned. It was shown that the relaxation mechanism of hot charge carriers (both hot electron and hot hole) follow different pathways and either of the mechanism is playing a role depending on the QDs structure and the surrounding conditions. Studies pertaining to interaction of QDs with other semiconductors, metal nanoparticles or with different molecular adsorbates suggest that the hot charge carrier extraction is possible in these heterojunctions with extraction time in sub‐ps scale. Application of hot charge carriers in different fields such as photovoltaics, photo‐catalysis, infrared detectors, and H2 detection have been shown and it was observed that the efficiency of the above‐mentioned processes is much higher when the hot charge carriers are involved, suggesting their importance in these areas.

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Section: Hot Charge Carrier Extraction From Semiconductor Qdsmentioning

confidence: 99%

Section: Hot Charge Carrier Extraction From Semiconductor Qdsmentioning

confidence: 99%

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Hot Charge Carriers in Quantum Dots: Generation, Relaxation, Extraction, and Applications

Singhal

Ghosh

2019

ChemNanoMat

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“…Nevertheless, the temporal response of IR photodetectors based on interfacial charge transfer is over tens to hundreds of milliseconds, some are even in the timescale of seconds. This is mainly limited by the common band‐edge electron transfer (CET) process, which is not fast enough to prevent carrier trapping processes . It was reported that the interlayer charge transfer between MoS 2 /WS 2 could be as fast as 90 fs, as probed by ultrafast spectroscopy .…”

mentioning

confidence: 99%

“…Notably, the cooling process can be prolonged to nanoseconds by virtue of phonon‐bottleneck or Auger heating effects . Subsequently, the carriers will either transfer to the adjacent semiconductor (CET, 0.5–100 ps), be recaptured by the trap states (0.2 ps to 1 ns), or directly recombine (1 ps to 10 ns) . The latter two processes occur with a large probability due to their comparable rates with CET.…”

mentioning

confidence: 99%

Fast Photoelectric Conversion in the Near‐Infrared Enabled by Plasmon‐Induced Hot‐Electron Transfer

Sun

et al. 2019

Advanced Materials

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Interfacial charge transfer is a fundamental and crucial process in photoelectric conversion. If charge transfer is not fast enough, carrier harvesting can compromise with competitive relaxation pathways, e.g., cooling, trapping, and recombination. Some of these processes can strongly affect the speed and efficiency of photoelectric conversion. In this work, it is elaborated that plasmon‐induced hot‐electron transfer (HET) from tungsten suboxide to graphene is a sufficiently fast process to prevent carrier cooling and trapping processes. A fast near‐infrared detector empowered by HET is demonstrated, and the response time is three orders of magnitude faster than that based on common band‐edge electron transfer. Moreover, HET can overcome the spectral limit of the bandgap of tungsten suboxide (≈2.8 eV) to extent the photoresponse to the communication band of 1550 nm (≈0.8 eV). These results indicate that plasmon‐induced HET is a new strategy for implementation of efficient and high‐speed photoelectric devices.

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Optical Switching of Hole Transfer in Double‐Perovskite/Graphene Heterostructure

Zhang

Debroye

et al. 2023

Advanced Materials

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Synergically combining their respective ultrahigh charge mobility and strong light absorption, graphene (Gr)/semiconductor heterostructures are promising building blocks for efficient optoelectronics, particularly photodetectors. Charge transfer (CT) across the heterostructure interface crucially determines device efficiency and functionality. Here, it is reported that hole-transfer processes dominate the ultrafast CT across strongly coupled double-perovskite Cs 2 AgBiBr 6 /graphene (DP/Gr) heterostructures following optical excitation. While holes are the primary charges flowing across interfaces, their transfer direction, as well as efficiency, show a remarkable dependence on the excitation wavelength. For excitation with photon energies below the bandgap of DPs, the photoexcited hot holes in Gr can compete with the thermalization process and inject into in-gap defect states in DPs. In contrast, above-bandgap excitation of DP reverses the hole-transfer direction, leading to hole transfer from the valence band of DPs to Gr. Experimental evidence that increasing the excitation photon energy enhances CT efficiency for both below-and above-bandgap photoexcitation regimes is further provided, unveiling the positive role of excess energy in enhancing interfacial CT. The possibility of switching the hole-transfer direction and thus the interfacial photogating field by tuning the excitation wavelength, provides a novel way to control the interfacial charge flow across a DP/Gr heterojunction.

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Efficient Hot Electron Transfer in Quantum Dot-Sensitized Mesoporous Oxides at Room Temperature

Cited by 25 publications

References 34 publications

Hot Charge Carriers in Quantum Dots: Generation, Relaxation, Extraction, and Applications

Hot Charge Carriers in Quantum Dots: Generation, Relaxation, Extraction, and Applications

Fast Photoelectric Conversion in the Near‐Infrared Enabled by Plasmon‐Induced Hot‐Electron Transfer

Optical Switching of Hole Transfer in Double‐Perovskite/Graphene Heterostructure

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