Efficient red GaP LED's with compensated p layers

Abstract

Efficient red GaP LED's have been fabricated by compensating the p side of the junction with a donor. The observed efficiency in the diodes fabricated remains invariant over a wide range of net acceptor concentration. Utilizing the recombination kinetic analysis of Jayson, Bhargava, and Dixon, it is shown that better injection efficiencies and higher Zn–O complex concentrations are the cause for this invariance. The compensation technique potentially offers a commercial LPE growth process from which high-efficiency low-cost LED's could be fabricated.

Oxygen Gettering in Green GaP : N LED's Grown by Overcompensated LPE

“…The N concentrations in various LPE layers were advantages over the normal two-step LPE process determined by measuring the absorption of the A line (6,22). It has been our experience as that of Lorimor at 2.310 eV at 77~ (24,25).…”

“…The wafers were not intentionally annealed, mally employed for double LPE (22). After allowing about 15 min for the Zn to dissolve, which was enhanced by oscillatory, circular motion of the substrate holder, p-LPE was initiated by cooling the melt from 890 ~ to 825~ at a rate of 0.44 ~ On completion of p-LPE at 825~ the NH3 flow was stopped and the substrates pulled out of the melt.…”

“…performed at significantly lower temperatures (920 ~ 825~ as compared to the range (1050~176 nordrogen. The wafers were not intentionally annealed, mally employed for double LPE (22). We may there-This growth schedule produces a total n-and p-layer fore assume that the variation in NA --ND between the thickness of 30-40 ~m.…”