Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers

Reiher, A.; Bläsing, J.; Dadgar, A.; Diez, A.; Krost, A.

doi:10.1016/s0022-0248(02)01880-8

Cited by 124 publications

(82 citation statements)

References 7 publications

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“…After cooling, the GaN epilayers containing the LT and HT AlN ILs were both subject to a compressive stress and a tensile stress, respectively. The results shown in Figures 3 and 4 are consistent with those reported by Dadgar et al, who demonstrated that the strain relaxation of GaN epilayers by inserting LT AlN ILs can further accumulate the compressive stress during the growth of GaN on Si [9,10]. Therefore, the relaxed LT AlN ILs can induce compressive stress to the subsequent GaN epilayer, whereas strained HT AlN ILs cannot induce sufficient compressive stress to the subsequent GaN epilayer.…”

Section: Epilayer Characteristicssupporting

confidence: 90%

“…After cooling, the GaN epilayers containing the LT and HT AlN ILs were both subject to a compressive stress and a tensile stress, respectively. The results shown in Figures [9,10]. Therefore, the relaxed LT AlN ILs can induce compressive stress to the subsequent GaN epilayer, whereas strained HT AlN ILs cannot induce sufficient compressive stress to the subsequent GaN epilayer.…”

Section: Epilayer Characteristicsmentioning

confidence: 91%

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On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate

et al. 2017

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Abstract:In this study, low-temperature (LT) and high-temperature (HT) AlN insertion layers (ILs) grown at 680 and 970 • C were integrated with 3.7-µm GaN-based heterostructure grown on 150-mm Si (111) substrates by metalorganic chemical vapor deposition. Under a V/III flow ratio of 1960, the GaN epilayer with a continuous interface resulting from the LT AlN IL was subject to a compressive stress of −0.109 GPa. However, the GaN epilayer with discontinuous interfaces resulting from the HT AlN IL growth under the same flow ratio was subject to a tensile stress of 0.174 GPa. To realize continuous interfaces between the GaN epilayer and HT AlN IL, a higher V/III ratio of 5960 was utilized to suppress the decomposition of GaN. It results in changing the stress state of the GaN-based heterostructure from tensile to compressive. This strategic finding indicates that a stress-controllable GaN on Si can be achieved via the incorporation of HT AlN ILs. A minimum curvature at 5 km −1 is demonstrated for the 3.7-µm GaN-based heterostructure on a 150-mm Si (111) substrate, which has high potential for power switching device applications.

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Section: Epilayer Characteristicssupporting

confidence: 90%

Section: Epilayer Characteristicsmentioning

confidence: 91%

On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate

et al. 2017

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“…The driving force for the 2D to 3D transition is the reduction of the surface free energy. The formation of islands also plays an important role in reducing the tensile stress, which is assumed to be ~0.2 GPa [11]. The density of the threading dislocations estimated by TEM is around 8 × 10 9 cm -2 for the 1 µm GaN grown on Si(111), which is comparable to those grown on sapphire substrates (~1 × 10 9 cm -2 ).…”

Section: Methodsmentioning

confidence: 99%

“…In these studies, the full width at half-maximum (FWHM) of X-ray rocking curves are usually in the range of 600-1200 arcsec [5 -10]. Recently, Dadgar et al used low-temperature AlN as nucleation and intermediate layers, and obtained very good crystal quality with FWHM smaller than 500 arcsec [10,11]. On the other hand, it is well known that GaN is not a good nucleation layer over Si because the meltback etching of Si substrate caused by Ga leads to polycrystalline and poor surface morphology.…”

Section: Introductionmentioning

confidence: 99%

High‐quality GaN films grown on Si(111) by a reversed Stranski–Krastanov growth mode

Chen

Shih

Chang

et al. 2004

Physica Status Solidi (b)

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PACS 68.37. Lp, 78.55.Cr, 81.15.Gh High-quality GaN film has been successfully grown on Si(111) substrates by metal-organic vapor phase epitaxy (MOVPE). Low-temperature GaN layers were inserted into high-temperature grown GaN as the intermediate layers. High-resolution transmission electron microscope (HRTEM) images revealed that the GaN tends to form large islands (~25 -50 nm) during temperature cycles. The formation of islands plays an important role in improving the crystal quality. Then, layer-by-layer growth was enhanced by ramping temperature to 1050 °C and increasing the growth rate. Finally, a mirror-like smooth surface was obtained. We describe the observed change in growth mode from three-dimensional (3D) to twodimensional (2D) as a reversed Stranski-Krastanov growth mode. The ω-rocking curve measurement gave a full width at half-maximum of 500 arcsec for GaN grown on Si. This is comparable to GaN grown on sapphire and is among the best results reported. The detailed epitaxial growth mechanism of GaN on Si (111) is also discussed.

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“…[1][2][3][4]). The AlN/GaN heterostructures are also of paramount importance for applications such as high electron mobility transistors (HEMTs), ultraviolet (UV) emitters and sensors, as well as optoelectronic devices based on the intersubband principle (e.g.…”

Section: Introductionmentioning

confidence: 99%

Strain accommodation and interfacial structure of AlN interlayers in GaN

Dimitrakopulos

Kalesaki

Komninou³

et al. 2009

Cryst. Res. Technol.

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The strain accommodation mechanisms at AlN interlayers in GaN, grown by radio‐frequency plasma assisted molecular beam epitaxy, are studied using transmission electron microscopy techniques and atomistic modelling. Interlayers of various thicknesses grown within GaN epilayers deposited on both sapphire and silicon substrates have been employed. Interlayers of thickness below 6 nm do not exhibit line defects although local roughness of the upper interlayer interface is observed as a result of the Al adatom kinetics and higher interfacial energy compared to the lower interface. Above 6 nm, introduction of a‐type misfit and threading dislocations constitutes the principal relaxation mechanism. Due to strain partitioning between AlN and GaN, threading dislocations adopt inclined zig‐zag lines thus contributing to the relief of alternating compressive‐tensile elastic strain across the AlN/GaN heterostructure. The observed dislocation configurations are consistent with a model of independent motion by climb or ancillary glide in response to their localized three‐dimensional strain environment. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers

Cited by 124 publications

References 7 publications

On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate

On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate

High‐quality GaN films grown on Si(111) by a reversed Stranski–Krastanov growth mode

Strain accommodation and interfacial structure of AlN interlayers in GaN

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