In this Letter, we present high-power continuous wave (CW) and Q-switched femtosecond laser-written Yb: YAG channel waveguide lasers. In Q-switched operation, obtained by a semiconductor saturable absorber mirror (SESAM), as well as in CW operation, the laser generates average output powers of more than 5.6 W and reaches slope efficiencies above 74%. The Q-switched laser operated at a maximum repetition rate of 5.4 MHz with a minimum pulse duration of 11 ns, and with a maximum pulse energy of 1 μJ. This laser has almost an order of magnitude higher average output power than previously reported Q-switched channel waveguide lasers. Dielectric channel waveguide (WG) lasers are among the most promising technologies for compact and reliable laser sources, that combine multiwatt power levels with a high level of integration [1]. Major breakthroughs were achieved thanks to much progress in waveguide fabrication methods such as ionexchange [2], liquid-phase epitaxy [3], and femtosecond-laser (fs-laser) inscription [4][5][6]. In continuous wave (CW) operation, power levels of up to 5.1 W and slope efficiencies up to 73% were reported for fs-laser-inscribed channel waveguide lasers [5]. Several Q-switched and CW modelocked dielectric channel waveguide lasers were demonstrated, and pulse durations down to 285 fs were realized [7,8]. Q-switched operation was demonstrated with average output power levels of up to 680 mW [9].In this Letter, we demonstrate that the combination of femtosecond laser-written crystalline channel waveguides with semiconductor saturable absorber mirrors (SESAMs) enables the realization of a high-power Q-switched channel WG laser.We present the first Q-switched channel WG lasers with multiwatt average output power, achieving pulse energies of up to 1 μJ.The waveguiding microstructures were inscribed into a 7% Yb 3 -doped Y 3 Al 5 O 12 (Yb:YAG) crystal with a fs-laser. They consist of two parallel tracks, which are inscribed by a linear translation of the sample perpendicular to the incident fs-laser beam. These tracks exhibit distances between 22 and 30 μm. Owing to a stress-induced refractive index change, the waveguiding region is in the center between the tracks. Such waveguides are often referred to as type II waveguides [4,5]. Here, we superimposed the linear translation with a velocity of 25 μm/s of the sample with a sine oscillation with an oscillation amplitude of 2 to 4 μm and an oscillation frequency of 70 Hz; the fs-laser writing scheme can be seen in Fig. 1.With this writing scheme a larger refractive index change and a better confinement of the laser mode can be achieved [5]. We modified our previous WG writing scheme [5,6,10] by inserting a pinhole with 600 μm diameter into the beam path of the fslaser to improve the beam quality by mode cleaning. Because of the large distance between the pinhole and the aspheric focusing lens (f 3.1 mm, NA 0.68) used for the laser inscription, only the 0th order of the resulting diffraction pattern is transmitted through the aperture of this lens. The ...