We investigate power-scaling of green-diode-pumped Ti:Sapphire lasers in continuous-wave (CW) and mode-locked operation. In a first configuration with a total pump power of up to 2 W incident onto the crystal, we achieved a CW power of up to 440 mW and self-starting mode-locking with up to 200 mW average power in 68-fs pulses using semiconductor saturable absorber mirror (SESAM) as saturable absorber. In a second configuration with up to 3 W of pump power incident onto the crystal, we achieved up to 650 mW in CW operation and up to 450 mW in 58-fs pulses using Kerr-lens mode-locking (KLM). The shortest pulse duration was 39 fs, which was achieved at 350 mW average power using KLM. The mode-locked laser generates a pulse train at repetition rates around 400 MHz. No complex cooling system is required: neither the SESAM nor the Ti:Sapphire crystal is actively cooled, only air cooling is applied to the pump diodes using a small fan. Because of mass production for laser displays, we expect that prices for green laser diodes will become very favorable in the near future, opening the door for low-cost Ti:Sapphire lasers. This will be highly attractive for potential mass applications such as biomedical imaging and sensing.

Abstract:We demonstrate the first self-referenced full stabilization of a diode-pumped solidstate laser (DPSSL) frequency comb with a GHz repetition rate. The Yb:CALGO DPSSL delivers an average output power of up to 2.1 W with a typical pulse duration of 96 fs and a center wavelength of 1055 nm. A carrier-envelope offset (CEO) beat with a signal-to-noise ratio of 40 dB (in 10-kHz resolution bandwidth) is detected after supercontinuum generation and f-to-2f interferometry directly from the output of the oscillator, without any external amplification or pulse compression. The repetition rate is stabilized to a reference synthesizer with a residual integrated timing jitter of 249 fs [10 Hz -1 MHz] and a relative frequency stability of 10 −12 /s. The CEO frequency is phase-locked to an external reference via pump current feedback using home-built modulation electronics. It achieves a loop bandwidth of ~150 kHz, which results in a tight CEO lock with a residual integrated phase noise of 680 mrad [1 Hz -1 MHz]. We present a detailed characterization of the GHz frequency comb that combines a noise analysis of the repetition rate f rep , of the CEO frequency f CEO , and of an optical comb line at 1030 nm obtained from a virtual beat with a narrow-linewidth laser at 1557 nm using a transfer oscillator. An optical comb linewidth of about 800 kHz is assessed at 1-s observation time, for which the dominant noise sources of f rep and f CEO are identified.

We demonstrate the first diode-pumped Ti:sapphire laser frequency comb. It is pumped by two green laser diodes with a total pump power of 3 W. The Ti:sapphire laser generates 250 mW of average output power in 61-fs pulses at a repetition rate of 216 MHz. We generated an octave-spanning supercontinuum spectrum in a photonic-crystal fiber and detected the carrier envelope offset (CEO) frequency in a standard f-to-2f interferometer setup. We stabilized the CEO-frequency through direct current modulation of one of the green pump diodes with a feedback bandwidth of 55 kHz limited by the pump diode driver used in this experiment. We achieved a reduction of the CEO phase noise power spectral density by 140 dB at 1 Hz offset frequency. An advantage of diode pumping is the ability for high-bandwidth modulation of the pump power via direct current modulation. After this experiment, we studied the modulation capabilities and noise properties of green pump laser diodes with improved driver electronics. The current-to-output-power modulation transfer function shows a bandwidth larger than 1 MHz, which should be sufficient to fully exploit the modulation bandwidth of the Ti:sapphire gain for CEO stabilization in future experiments.

We present the first characterization of the noise properties and modulation response of the carrier-envelope offset (CEO) frequency in a semiconductor modelocked laser. The CEO beat of an optically-pumped vertical external-cavity surface-emitting laser (VECSEL) at 1030 nm was characterized without standard f -to-2f interferometry. Instead, we used an appropriate combination of signals obtained from the modelocked oscillator and an auxiliary continuous-wave laser to extract information about the CEO signal. The estimated linewidth of the free-running CEO beat is approximately 1.5 MHz at 1-s observation time, and the feedback bandwidth to enable a tight CEO phase lock to be achieved in a future stabilization loop is in the order of 300 kHz. We also characterized the amplitude and phase of the pump current to CEO-frequency transfer function, which showed a 3-dB bandwidth of ∼300 kHz for the CEO frequency modulation. This fulfills the estimated required bandwidth and indicates that the first self-referenced phase-stabilization of a modelocked semiconductor laser should be feasible in the near future. Optical frequency combs from modelocked solid-state lasers have been a revolution in the field of high precision metrology by directly and coherently linking the optical and microwave parts of the electromagnetic spectrum [1][2][3]. Such stabilized frequency combs enable the measurement of optical frequencies with an extreme precision [4,5] and constitute a key element of novel optical atomic clocks that have surpassed the best microwave frequency standards in terms of fractional frequency stability [6,7]. Most comb applications today require self-referencing, i.e., the detection and stabilization of the carrier envelope offset (CEO) frequency f CEO [1,8]. This has been achieved in various fiber laser systems [9] and solid-state lasers (Ti:sapphire [2] or diode-pumped solid-state lasers-DPSSLs [10,11]). Electronic feedback modulating the pump power of the femtosecond laser is the most common approach to phase-stabilize f CEO to an external reference frequency [3]. Alternative methods have been demonstrated, which make use of an intracavity loss modulator enabling the modulation bandwidth to be extended beyond the gain lifetime limitation, such as a graphene electro-optic modulator [12] or an opto-optical modulation of a semiconductor saturable absorber mirror (SESAM) [13]. Other solutions are based on feedforward corrections applied to the CEO frequency [14] or passive CEO cancellation using a difference frequency generation (DFG) process [15].Self-referencing modelocked lasers with a high repetition rate in the GHz range is much more challenging, as the CEO noise typically scales with the repetition rate [16], therefore requiring larger feedback bandwidths. In addition, the standard self-referencing method most often involves f -to-2f interferometry to detect the CEO frequency [1]. This requires a coherent supercontinuum (SC) spectrum that covers at least one frequency octave, which is fairly challenging to achieve fo...

Optical frequency combs based on ultrafast lasers have enabled numerous scientific breakthroughs. However, their use for commercial applications is limited by the complexity and cost of femtosecond laser technology. Ultrafast semiconductor lasers might change this issue as they can be mass produced in a cost-efficient way while providing large spectral coverage from a single technology. However, it has not been proven to date if ultrafast semiconductor lasers are suitable for stabilization of their carrier-envelope offset (CEO) frequency. Here we present what we believe to be the first CEO frequency stabilization of an ultrafast semiconductor disk laser (SDL). The optically pumped SDL is passively modelocked by a semiconductor saturable absorber mirror. It operates at a repetition rate of 1.8 GHz and a center wavelength of 1034 nm. The 273 fs pulses of the oscillator are amplified to an average power level of 6 W and temporally compressed down to 120 fs. A coherent octave-spanning supercontinuum spectrum is generated in a photonic crystal fiber. The CEO frequency is detected in a standard f -to-2f interferometer and phase locked to an external reference by feedback applied to the current of the SDL pump diode. This proof-of-principle demonstrates that ultrafast SDLs are suitable for CEO stabilization and constitutes a key step for further developments of this comb technology expected in the coming years.