1985
DOI: 10.1002/cber.19851181137
|View full text |Cite
|
Sign up to set email alerts
|

Eine neue in situ ‐Darstellung von (Trimethylsilyl)‐trifluormethansulfonat durch thermisch induzierte Umlagerung

Abstract: A new in situ preparation of trirnethylsilyl tnfluoromethanesulfonate (3) is described: 3 is generated by a thermally induced rearrangement of (dimethylsily1)methyI trifluoromethanesulfonate (2), which can be prepared by reaction of (CH3)&(H)CH20H (1) with (CF3S0&0. Starting with C6H5(CH3)Si(H)CH,0H (5), the derivative (methylphenylsily1)-methyl trifluoromethanesulfonate (6) can be obtained by a similar method. Its thermally induced rearrangement leads to dimethylphenylsilyl trifluoromethanesulfonate (7). The … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
1
0
2

Year Published

1986
1986
2017
2017

Publication Types

Select...
7
1

Relationship

2
6

Authors

Journals

citations
Cited by 12 publications
(3 citation statements)
references
References 10 publications
(3 reference statements)
0
1
0
2
Order By: Relevance
“…IR: additional signal at 1163 m. 1H NMR: additional signal at 0.09 (t, J = 2.2, DCH2Si). MS: 241 (100), 240 (66), 224 (12), 223 (7).…”
Section: Methodsmentioning
confidence: 99%
“…IR: additional signal at 1163 m. 1H NMR: additional signal at 0.09 (t, J = 2.2, DCH2Si). MS: 241 (100), 240 (66), 224 (12), 223 (7).…”
Section: Methodsmentioning
confidence: 99%
“…Wir haben uns deshalb für das thermische Verhalten des von la und lb abzuleitenden Germanium-Analogons (Acetoxymethyl)methylphenylgerman (lc) interessiert und untersucht, ob dieses ther misch zu Acetoxydimethylphenylgerman (2 c) um gelagert werden kann. C PH 16G e 0 4 (296, 9) Ber. C 48,55 H 5,43, Gef.…”
Section: Experimenteller Teilunclassified
“…hierzu Ref. [2][3][4][5][6] waren wir vor allem an der Fr~ge interessiert, ob die (Thioacetoxy-Smethyl)diorganylsilane 9 und 10 in Analogie zu den entsprechenden (Acetoxymethyl)diorganylsilanen 3 und 4 einer thermisch induzierten Umlagerung unterliegen.…”
Section: Introductionunclassified