EKV3 Parameter Extraction and Characterization of 90nm RF-CMOS Technology

Yoshitomi, Sadayuki; Bazigos, Antonios; Bucher, Matthias

doi:10.1109/mixdes.2007.4286123

Cited by 12 publications

(9 citation statements)

References 9 publications

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“…The intrinsic model is complemented by a fully scalable RF parasitic network for gate and substrate parasitics [4,5]. A channel segmentation technique ensures consistent handling of NQS modelling [6] under small-and large-signal conditions.…”

Section: Methodsmentioning

confidence: 99%

“…EKV3 [1,2] is an advanced, scalable non-linear MOSFET compact model based on the charge-sheet theory, which uses a unified equation set to describe static to high-frequency behaviour in all operating regions. The model has been verified [3,4] against several advanced CMOS technologies with drawn gate lengths down to 65 nm and has shown excellent fitting results.…”

mentioning

confidence: 99%

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High‐frequency scalable compact modelling of Si RF‐CMOS technology

Bazigos

Bucher

Sakalas

et al. 2008

Phys. Status Solidi (c)

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Stability instead of explosiveness characterizes a novel diazonium ion T2* on a solid support, which opens a facile route to the versatile chemistry of diazo compounds and triazenes. This diazonium ion can be used as a linker for the immobilization and modification of amines (see scheme). The high stability also allows its application as a scavenger for amines, anilines, and phenols in combinatorial synthesis in the liquid phase.

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Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

High‐frequency scalable compact modelling of Si RF‐CMOS technology

Bazigos

Bucher

Sakalas

et al. 2008

Phys. Status Solidi (c)

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“…An RF compact model should predict the electrical behaviour of MOS devices over a large range of frequency, geometry and bias. Former work showed the EKV3 model application on 180nm, 110nm, 90nm CMOS technologies, mostly in the frequency range up to 20 GHz. In the present work, the EKV3 compact model is presented up to millimetre‐wave frequencies, for the TSMC 90 nm RF LP process.…”

Section: Implementation Of Ekv3 Verilog‐a‐based Model Into Ngspice VImentioning

confidence: 99%

Open‐source circuit simulation tools for RF compact semiconductor device modelling

Grabinski¹,

Brinson

Nenzi

et al. 2014

Int J Numerical Modelling

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SUMMARYMOS-Modelle und Parameterextraktion Arbeitskreis (MOS-AK) is a European, independent compact modelling forum created by a group of engineers, researchers and compact modelling enthusiasts to promote advanced compact modelling techniques and model standardization using high-level behavioural modelling languages such as VHDL-AMS and Verilog-A. This invited paper summarizes recent MOS-AK open-source compact model standardization activities and presents advanced topics in metal-oxide-semiconductor field-effect transistor modelling, focusing in particular on analogue/radio frequency applications. The paper discusses links between compact models and design methodologies, finally introducing elements of compact model standardization. The opensource computer-aided design tools Qucs, QucsStudio and ngspice all support Verilog-A as a hardware description language for compact model standardization. Latter sections of this paper describe a Verilog-A implementation of the EKV3 MOS transistor model. Additionally, the simulated radio frequency model performance is evaluated and compared with experimental results for 90 nm CMOS technology.

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“…9-12, even the EKV 2.6 and BSIM 3.3 models are not able to satisfy precision for all operating modes and all device types. This is the reason why the more sophisticated models EKV 3.x [15] and BSIM 4.x [13] are continuously developed.…”

Section: Identification Of Ekv 26 and Bsim 33 Modelsmentioning

confidence: 99%