Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides

Yonenaga, Ichiro; Ohkubo, Yasushi; Deura, Momoko; Kutsukake, Kentaro; Tokumoto, Yuki; Ohno, Yutaka; Yoshikawa, Akihiko; Wang, Xinqiang

doi:10.1063/1.4926966

“…8b). 18,19 It should be noted that the strain in the c-axis and a-axis being calculated in all cases is for the individual grains of the polycrystalline material. (Fig.…”

Section: Resultsmentioning

confidence: 99%

Atomic Layer Deposition of InN Using Trimethylindium and Ammonia Plasma

Deminskyi¹,

Rouf²,

Ivanov³

et al. 2019

Preprint

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<div>InN is a low band gap, high electron mobility semiconductor material of interest to optoelectronics and telecommunication. Such applications require the deposition of uniform crystalline InN thin films on large area substrates, with deposition temperatures compatible with this temperature-sensitive material. As conventional chemical vapor deposition (CVD) struggles with the low temperature tolerated by the InN crystal, we hypothesize that a time-resolved, surface-controlled CVD route could offer a way</div><div>forward for InN thin film deposition. In this work, we report atomic layer deposition of crystalline, wurtzite InN thin films using trimethylindium and ammonia plasma on Si (100). We found a narrow ALD window of 240–260 °C with a deposition rate of 0.36 Å/cycle and that the flow of ammonia into the plasma is an important parameter for the crystalline quality of the film. X-ray photoelectron spectroscopy measurements shows nearly stoichiometric InN with low carbon level (< 1 atomic %) and oxygen level (< 5 atomic %) in the film bulk. The low carbon level is attributed to a favorable surface chemistry enabled by the NH<sub>3</sub> plasma. The film bulk oxygen content is attributed to oxidation upon exposure to air via grain boundary diffusion and possibly by formation of oxygen containing species in the plasma discharge.</div>

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“…8b). 18,19 It should be noted that the strain in the c-axis and a-axis being calculated in all cases is for the individual grains of the polycrystalline material.…”

Section: Resultsmentioning

confidence: 99%

“…Variations of the a-and c-axis lattice constants of In-and N-growth face InN films with the film thickness at (a) different temperatures at 2400 W NH3 plasma, and (b)different plasma power at 320 ºC. Dashed lines show strain-free lattice constant of the aand c-axis 18.…”

mentioning

confidence: 99%

Atomic Layer Deposition of InN Using Trimethylindium and Ammonia Plasma

Deminskyi¹,

Rouf²,

Ivanov³

et al. 2018

Preprint

0

View full text Add to dashboard Cite

<div>InN is a low band gap, high electron mobility semiconductor material of interest to optoelectronics and telecommunication. Such applications require the deposition of uniform crystalline InN thin films on large area substrates, with deposition temperatures compatible with this temperature-sensitive material. As conventional chemical vapor deposition (CVD) struggles with the low temperature tolerated by the InN crystal, we hypothesize that a time-resolved, surface-controlled CVD route could offer a way</div><div>forward for InN thin film deposition. In this work, we report atomic layer deposition of crystalline, wurtzite InN thin films using trimethylindium and ammonia plasma on Si (100). We found a narrow ALD window of 240–260 °C with a deposition rate of 0.36 Å/cycle and that the flow of ammonia into the plasma is an important parameter for the crystalline quality of the film. X-ray photoelectron spectroscopy measurements shows nearly stoichiometric InN with low carbon level (< 1 atomic %) and oxygen level (< 5 atomic %) in the film bulk. The low carbon level is attributed to a favorable surface chemistry enabled by the NH<sub>3</sub> plasma. The film bulk oxygen content is attributed to oxidation upon exposure to air via grain boundary diffusion and possibly by formation of oxygen containing species in the plasma discharge.</div>

show abstract

“…The contact loading and/or packaging that can experience during fabrication could really damage the devices' performance. Nanoindentation technique is currently an effective method for probing mechanical features of thin films at nanoscale, without any concern about the limitation of sample size and shape [26]. However, it is noticed a large dispersion of the measured mechanical properties that were reported in literature [26][27][28].…”

Section: Introductionmentioning

confidence: 99%