Electric and Physical Chacteritics of a SiC-PiN Diode for High-Power Devices

Kim, Nam-Oh; Min, Wan-Ki; Sung, Ki Hyuk; Suzuki, Kazuhiro; Tanaka, Yasunori; Ohashi, Hiromichi

doi:10.3938/jkps.52.1881

Cited by 3 publications

(1 citation statement)

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“…The ambipolar diffusion length is needed to govern the physics in intrinsic region [2]. PIN diode can operate in high reverse bias voltage and high switching frequency [3]. The application of PIN diodes is appreciable in optical physics as it is very sensitive to light waves.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Ambipolar Intrinsic Resistance of PIN Diode for Different Semiconductors Suitable for Power Devices

Das

Mukherjee

Panda³

et al. 2015

Computational Advancement in Communication Circuits and Systems

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The literature of power device must be aware of the fact of proper tradeoff between the choice of semiconductor material and the proper oxide along with it. With the growing semiconductor technology, the traditional semiconductor now has the promising competitor like silicon carbide and gallium nitride. The simulation considers Shockley-Read-Hall recombination model along with ambipolar diffusion mechanism. The analysis proves SiC-3C and SiC-6H as the most promising material for PIN diode manufacturing industries. The intrinsic region width and forward current are varied keeping another parameter constant while determining the resistance. The purpose of this work is to find out the ambipolar intrinsic resistance of PIN diode which will play key role in determining total ambipolar resistance of PIN diode.

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Section: Introductionmentioning

confidence: 99%