Electric-field-controlled interface strain coupling and non-volatile resistance switching of La1-xBaxMnO3 thin films epitaxially grown on relaxor-based ferroelectric single crystals

Abstract

Articles you may be interested inStrain induced tunable anisotropic magnetoresistance in La0.67Ca0.33MnO3/BaTiO3 heterostructures J. Appl. Phys. 113, 17C716 (2013); 10.1063/1.4795841 Origin of large recoverable strain in 0.94(Bi0.5Na0.5)TiO3-0.06BaTiO3 near the ferroelectric-relaxor transition Appl. Phys. Lett. 102, 062902 (2013); 10.1063/1.4790285 Coexistence of tunneling magnetoresistance and electroresistance at room temperature in La0.7Sr0.3MnO3/(Ba, Sr)TiO3/La0.7Sr0.3MnO3 multiferroic tunnel junctionsWe have fabricated magnetoelectric heterostructures by growing ferromagnetic La 1-x Ba x MnO 3 (x ¼ 0.2, 0.4) thin films on (001)-, (110)-, and (111)-oriented 0.31Pb(In 1/2 Nb 1/2 )O 3 -0.35Pb(Mg 1/3 Nb 1/2 )O 3 -0.34PbTiO 3 (PINT) ferroelectric single-crystal substrates. Upon poling along the [001], [110], or [111] crystal direction, the electric-field-induced non-180 domain switching gives rise to a decrease in the resistance and an enhancement of the metal-to-insulator transition temperature T C of the films. By taking advantage of the 180 ferroelectric domain switching, we identify that such changes in the resistance and T C are caused by domain switching-induced strain but not domain switching-induced accumulation or depletion of charge carriers at the interface. Further, we found that the domain switching-induced strain effects can be efficiently controlled by a magnetic field, mediated by the electronic phase separation. Moreover, we determined the evolution of the strength of the electronic phase separation against temperature and magnetic field by recording the straintunability of the resistance [ðDR=RÞ strain ] under magnetic fields. Additionally, opposing effects of domain switching-induced strain on ferromagnetism above and below 197 K for the La 0.8 Ba 0.2 MnO 3 film and 150 K for the La 0.6 Ba 0.4 MnO 3 film, respectively, were observed and explained by the magnetoelastic effect through adjusting the magnetic anisotropy. Finally, using the reversible ferroelastic domain switching of the PINT, we realized non-volatile resistance switching of the films at room temperature, implying potential applications of the magnetoelectric heterostructure in non-volatile memory devices. V C 2014 AIP Publishing LLC.

Reversible and nonvolatile tuning of photoluminescence response by electric field for reconfigurable luminescent memory devices

“…Apart from the initial strain state (O state), an electric-field-induced lateral tensile strain state (B state) can also be achievable due to the stable residual lateral polarization vectors in the PMN-PT(111) (denoted by // r P in Figure 2c) [14,15]. Such two stable, switchable, and nonvolatile residual strain states (O and B) have been utilized to realize stable, reversible, and nonvolatile tuning of different types of lattice-coupled physical properties, such as ferromagnetic resonance frequency [18], metal-insulator transition temperature [20], room-temperature resistance [21,22], magnetoresistance effect [23,24], and photoresistance effect [25], etc., in various PMN-PT based systems.…”

“…The PL switching of our structure also shows excellent retention properties (not shown here), which is favorable for memory device application. In our previous paper [22][23][24][25]34], binary stable resistance states can be stored by imposing a sequence of electric field pulses. In this work, the principle of using the PL intensity instead of commonly used resistance state to store digital information opens a significant avenue towards developing future memory devices.…”

“…Therefore, two kinds of reversible and nonvolatile residual strains can be obtained through rotating the ferroelectric domains between the longitudinal (upward or downward) and lateral directions by imposing proper external fields (i.e., domain-engineered ferroelastic switching) [14,15], which offers the possibility of nonvolatile switching of multiple functionalities. Based on this principle, the nonvolatile modulation of physical properties has been demonstrated in several functional thin films, including ferromagnetic alloy [16][17][18], ferrimagnetic ferrites [19], vanadium oxides [20], ruthenium oxides [21], and colossal magnetoresistive manganites [22][23][24][25], through ferroelastic strain effect. In spite of those efforts dedicated to in situ reversible modulation of lattice-sensitive PL response for rare-earth-doped ferroelectric oxide films by piezostrain, nonvolatile control of PL properties for luminescent memory devices by electric field is still missing.…”