Electric field dynamics at a metal-semiconductor interface probed by femtosecond optical second harmonic generation

Jong, W. de; Etteger, A.F. van; Hof, C.; Hall, P. J. van; Rasing, T.H.M.

doi:10.1016/0039-6028(95)80016-6

Cited by 11 publications

(9 citation statements)

References 15 publications

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“…This is consistent with a recent SHG study of Au/GaAs Schottky barriers as a function of junction bias and SHG probe intensity. 15,16 Additionally, our results support the proposal of Yamada, Kimura, and Fuqua that a correlation observed between ''surface-sensitive'' SHG and simultaneously obtained photoluminescence during photowashing of GaAs wafers was due to unpinning of the Fermi level combined with an EFISH contribution to the SHG. 51 It should be noted that the SHG probe in Ref.…”

Section: Relationship To Previous Worksupporting

confidence: 90%

“…In Ref. 16, it is incorrectly stated that the depletion electric field contributes linearly to b ͑2͒ and c ͑2͒ . Also, note that the contribution can be uniquely determined from the b ͑4͒ and c ͑4͒ terms.…”

Section: ͑19͒mentioning

confidence: 97%

“…The strong increase in ͉b pp ͉ for the 5ϫ10 16 -cm Ϫ3 and semi-insulating samples at photon energies below the fundamental gap is intriguing. As no statistically significant photomodulation of this signal could be detected, the increase cannot be associated with the weak depletion field of the low-doped samples.…”

Section: A Data In the Absence Of Photogenerated Carriersmentioning

confidence: 98%

“…4,[6][7][8][9][10][11] Several recent reports have demonstrated convincingly that depletion-electric-fieldinduced second-harmonic generation ͑depletion-EFISH͒ can dominate surface contributions in a number of semiconducting samples. [12][13][14][15][16] In the present paper, we demonstrate the importance of the depletion electric field in modifying the SHG observed from oxidized GaAs͑001͒, and conclude that nearly all of the signal attributed to the reduction of symmetry at the surface of highly doped samples results from the near-surface depletion electric field.…”

Section: Introductionmentioning

confidence: 96%

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Depletion-electric-field-induced second-harmonic generation near oxidized GaAs(001) surfaces

et al. 1997

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Second-order nonlinear mixing is evaluated as a probe of the depletion electric field in the near-surface region of GaAs͑001͒. A phenomenological model is presented whereby the nonlinear susceptibility is expanded in the depletion electric field. For GaAs, three terms contribute to the observed nonlinear mixing: the dipole-allowed bulk contribution and first-and second-order contributions in the depletion electric field. All three contributions can be isolated by a combination of rotational anisotropy and photomodulation studies. The second-harmonic signal from oxidized GaAs͑001͒ surfaces was measured as a function of azimuthal sample orientation, photomodulation, and dopant density for fundamental photon energies in the region 1.17-1.51 eV. The first-order depletion-electric-field contribution dominates the second-order contribution, and can be comparable to the intrinsic bulk contribution for high surface fields. The results rule out significant contributions arising from either bulk electric quadrupole or surface dipole effects. ͓S0163-1829͑97͒00616-4͔

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