Electric Properties of SrTiO<sub>3</sub> Thin Films Prepared by RF Sputtering

Kuroiwa, Takeharu; Honda, Tetsuya; Watarai, Hisao; Sato, Ken

doi:10.1143/jjap.31.3025

Cited by 51 publications

(6 citation statements)

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“…The STO films were grown on (111)Pt/ (100)Si substrates by RF magnetron sputtering at 400 C and then annealed at 600 C for 2 h at low pressure of 10 À7 Torr. [38][39][40][41][42] The NiFe films of a 400 lm-diameter were sputtered onto the STO films at room temperature. 3 nm Cu was deposited on each NiFe layer as the capping layer.…”

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confidence: 99%

“…The dielectric constant was calculated as 75 with negligible leakage current <10 À8 A at 5 V bias voltage, which is comparable to other sputter deposited STO thin films. [38][39][40][41][42] Figure 1(c) demonstrated the AFM image of NiFe (1.2 nm)/STO (50 nm) heterostructure with 3 nm Cu cap layer, showing a smooth surface with a low surface roughness of 0.88 nm. Figure 2(a) shows the schematic of FMR measurements of a NiFe (1.2 nm)/STO (50 nm) multiferroic heterostructure by applying voltage from À5 V to 5 V in an X-band (9.55 GHz) ESR system.…”

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confidence: 99%

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Quantifying thickness-dependent charge mediated magnetoelectric coupling in magnetic/dielectric thin film heterostructures

Zhou

Nan

Gao

et al. 2013

Applied Physics Letters

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Precise quantification of the magnetoelectric coupling strength in surface charge induced magnetoelectric effect was investigated in NiFe/SrTiO3thin film heterostructures with different ultra-thin NiFe thicknesses through voltage induced ferromagnetic resonance. The voltage induced ferromagnetic resonance field shifts in these NiFe/SrTiO3thin films heterostructures showed a maximum value of 65 Oe at an intermediate NiFe layer thickness of ∼1.2 nm, which was interpreted based on the thin film growth model at the low-thicknesses and on the charge screening effect at large thicknesses. The precise quantification and understanding of the magnetoelectric coupling in magnetic/dielectric thin filmsheterostructures constitute an important step toward real applications.

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confidence: 99%

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confidence: 99%

Quantifying thickness-dependent charge mediated magnetoelectric coupling in magnetic/dielectric thin film heterostructures

Zhou

Nan

Gao

et al. 2013

Applied Physics Letters

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“…In general, the oxygen vacancies of an oxide material form a donor level. 25,26 Electrons trapped at the donor level are emitted due to the Schottky effect, elevating the leakage current exponentially with the applied voltage. It could be concluded that the leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate and the oxygen vacancies role as charge traps and carriers in a leakage current mechanism.…”

Section: G97mentioning

confidence: 99%

Influence of the Oxygen Concentration of YSZ Gate Dielectric Layer on the Low Voltage Operating Pentacene Thin Film Transistor

Kim

Lee

et al. 2006

Electrochem. Solid-State Lett.

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We report on the influence of oxygen concentration on structural and electrical properties of the amorphous yttria-stabilized zirconia ͑YSZ͒ thin films which are the potential high-k gate dielectric material of organic thin film transistors ͑OTFTs͒. The films were prepared by the E-beam evaporation process. To investigate the influence of the oxygen flow rate on the structural and electrical properties of the YSZ films, X-ray diffraction, X-ray photoelectron spectroscopy, current density-electric field, currentvoltage were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate.Organic thin-film transistors ͑OTFT͒ have attracted a great deal of attention. Recently, a great amount of research has been focused on OTFTs as they are one of the most important components in the fabrication of low cost, large area flexible displays, and low end electronics. 1,2 A major problem that hinders the development of practical OTFT devices is that current devices require rather high voltages to operate, while in a typical low-end application, the available voltage will be very low. The key to low-voltage operation is reduction of the threshold voltage and the inverse subthreshold slope. These transistor parameters are largely controlled by the gate insulator rather than the semiconductor. In the case of semicrystalline organic semiconductors such as pentacene, the morphology and molecular ordering of the semiconductor at the dielectric/ semiconductor interface have a significant influence on the field effect mobility of the device, and are determined by the quality of the dielectric/semiconductor interface. The reason for that was shown to be the mobility dependence on the accumulated charge in the OTFT channel. Since this charge is proportional with both the dielectric constant and the gate voltage, it has been suggested that the use of high dielectric constant ͑k͒ materials will allow the necessary charge to accumulate at much lower voltages. 3-6 Peng et al. showed a correlation between the device field effect mobility and the capacitance of dielectric. 7 However, high-k gate dielectric generally caused a high leakage current. De Boer et al. reported that leakage current from the gate electrode causes irreversible degradation of OTFT, even when it is orders of magnitude smaller than the source-drain current. How to reduce the leakage current has become an important subject in the study of OTFT. 8,9 Yttria-stabilized zirconia ͑YSZ͒ may be a good candidate for the high-k gate dielectric films of the OTFT due to its high-k values of about 30 at room temperature and wide bandgap of 5.1-7.8 eV, good chemical stability, and high resistivity. 10,11 Due to their excellent properties, YSZ films have been extensively studied as gate dielectrics. 12,13 In this work, the E-beam evaporation technique was used for the low-temperature growth of high-qu...

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“…Here, we are interested in STO which is a n-type oxide (a semiconductor) and owns a huge potential for various applications. It can be employed as a high-k dielectric/insulator [17,18], a photocatalyst [19], a superconducting material at cryogenic temperatures [20], or a protection material with excellent chemical stability at high temperatures [21]. In general, those outstanding thermal and electrical properties render STO as a useful candidate for thermoelectric applications in harsh environments.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric properties of Nb-doped SrTiO₃ films prepared by co-sputtering

Kim

Duy

Lee

et al. 2020

Journal of Asian Ceramic Societies

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SrTiO 3 (STO), a member of perovskite structure materials, exhibits a large thermoelectric figure of merit at high temperatures. Theoretically, its property can be significantly improved by niobium (Nb) dopant. So far, the synthesis method of Nb-doped STO and the evaluation of their thermoelectric properties at low temperatures have not been explored fully. Here, our development of highly Nb-doped STO films using the co-sputtering with STO and Nb targets at room temperature (298 K) is introduced. A rapid annealing process (30 min, at 1073 K) is applied to further crystallize these films. Through measurements at 300 ~ 600 K, a significant improvement of the thermoelectric performance of STO films upon 2% Nb-doping is observed. Particularly, the working temperature of Nb-doped STO begins at 350 K instead of 475 K of STO. The figure of merit of Nb-doped STO can reach 0.53 at 600 K. Through TEM-EDS and TOF-SIMS characterizations, the mechanism of Nb-doping effect on the STO properties is revealed and discussed in detail. Our doping method at room temperature is potential, as compared to other synthesis methods, regarding the uniform incorporation of Nb dopants in STO films. Overall, our work showed another way for further improvement of perovskite-based thermoelectric materials.

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Electric Properties of SrTiO₃ Thin Films Prepared by RF Sputtering

Cited by 51 publications

References 4 publications

Quantifying thickness-dependent charge mediated magnetoelectric coupling in magnetic/dielectric thin film heterostructures

Quantifying thickness-dependent charge mediated magnetoelectric coupling in magnetic/dielectric thin film heterostructures

Influence of the Oxygen Concentration of YSZ Gate Dielectric Layer on the Low Voltage Operating Pentacene Thin Film Transistor

Thermoelectric properties of Nb-doped SrTiO₃ films prepared by co-sputtering

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Electric Properties of SrTiO3 Thin Films Prepared by RF Sputtering

Cited by 51 publications

References 4 publications

Quantifying thickness-dependent charge mediated magnetoelectric coupling in magnetic/dielectric thin film heterostructures

Quantifying thickness-dependent charge mediated magnetoelectric coupling in magnetic/dielectric thin film heterostructures

Influence of the Oxygen Concentration of YSZ Gate Dielectric Layer on the Low Voltage Operating Pentacene Thin Film Transistor

Thermoelectric properties of Nb-doped SrTiO3 films prepared by co-sputtering

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Electric Properties of SrTiO₃ Thin Films Prepared by RF Sputtering

Thermoelectric properties of Nb-doped SrTiO₃ films prepared by co-sputtering