Quantifying thickness-dependent charge mediated magnetoelectric coupling in magnetic/dielectric thin film heterostructures

Zhou, Ziyao; Nan, Tianxiang; Gao, Yuan; Yang, Xi; Beguhn, S.; Li, M.; Yu, Lu; Wang, Junling; Liu, Ming; Mahalingam, Krishnamurthy; Howe, Brandon M.; Brown, Gail J.; Sun, Nian X.

doi:10.1063/1.4839276

Cited by 35 publications

(32 citation statements)

References 46 publications

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“…21 Furthermore, precise quantification of the ME coupling strength in the surface charge induced ME effect in NiFe/SrTiO 3 thin film heterostructures with different ultra-thin NiFe thicknesses was investigated using voltage induced ferromagnetic resonance (FMR). The voltage induced FMR field shifts in these NiFe/SrTiO 3 thin film heterostructures showed a maximum value of 65 Oe at an intermediate NiFe layer thickness of ∼1.2 nm, as reported by Sun et al 22 . However, to date, most studies have only investigated changes in the magnetic anisotropy induced strain, and few articles to study the temperature dependence of magnetic coupling effect.…”

confidence: 55%

Temperature dependence of electric field tunable ferromagnetic resonance lineshape in multiferroic heterostructure

et al. 2016

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Herein, we experimentally investigate the effect of temperature on the electric field tunable ferromagnetic resonance (FMR) in a ferroelectric/ferromagnetic heterostructure, and demonstrate the tuning of abnormal change in FMR using the polarization of the ferroelectric layer above 200 K. The FMR was found to be almost unchanged under different electric field strength at 100 K owing to frozen polarization, which causes extremely weak magnetoelectric coupling. More interestingly, negative effective linewidth was observed when an electric field greater than 10 kV/cm was applied above 220 K. The simultaneous electrical control of magnetization and its damping via FMR based on linear magnetoelectric coupling are directly relevant to use of composite multiferroics for a wide range of devices.

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confidence: 55%

Temperature dependence of electric field tunable ferromagnetic resonance lineshape in multiferroic heterostructure

et al. 2016

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“…and $ 200 Oe (NiFe/PMN-PT) 59 FMR field tunability was demonstrated. FMR tunability was also shown in MgO ultrathin film magnetic tunneling junctions (MTJ).…”

mentioning

confidence: 96%

“…The strain and charge co-mediated ME coupling in ultra-thin magnetic/ ferroelectric heterostructures could lead to power efficient and nonvolatile ME devices with enhanced ME coupling. After distinguishing the charge mediated ME coupling strength, Zhou et al 59 then investigated the correlation between charge mediated ME coupling strength and thickness of NiFe ultrathin magnetic film in order to maximize the performance of charge-mediated ME devices. Precise quantification of the ME coupling strength in surface chargeinduced ME effect was studied in NiFe/SrTiO 3 thin film heterostructures with different ultra-thin NiFe thicknesses through voltage-induced FMR measurements, as shown in Fig.…”

Section: Fmr Tuning By Interfacial Charge-induced Me Couplingmentioning

confidence: 99%

“…[51][52][53][54][55][56][57][58][59] The charge accumulation at ultrathin magnetic/dielectric or ferroelectric interface will change the spin-orbit coupling of magnetic layer [51][52][53][54][55][56][57] and then influence the surface anisotropy of magnetic layer, resulting in FMR frequency change. Nan et al 58 studied the NiFe ($ 1 nm)/PMN-PT bilayer heterostructure where the strain and charge co-mediated ME coupling are expected, which could lead to significantly enhanced ME coupling.…”

Section: Fmr Tuning By Interfacial Charge-induced Me Couplingmentioning

confidence: 99%

“…49,50 In YIG/BSTO thin film heterostructure, $ 5-6 Oe small FMR field change was observed by EM-spin wave coupling. 49 Interfacial charge-induced ME coupling in ultrathin magnetic film ($1nm) also do not suffer from sample clamping effect, [51][52][53][54][55][56][57][58][59] for example, $ 60 Oe (NiFe/SrTiO 3 Þ…”

Section: Introductionmentioning

confidence: 99%

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Voltage control of ferromagnetic resonance

et al. 2016

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Voltage control of magnetism in multiferroics, where the ferromagnetism and ferroelectricity are simultaneously exhibiting, is of great importance to achieve compact, fast and energy efficient voltage controllable magnetic/microwave devices. Particularly, these devices are widely used in radar, aircraft, cell phones and satellites, where volume, response time and energy consumption is critical. Researchers realized electric field tuning of magnetic properties like magnetization, magnetic anisotropy and permeability in varied multiferroic heterostructures such as bulk, thin films and nanostructure by different magnetoelectric (ME) coupling mechanism: strain/stress, interfacial charge, spin-electromagnetic (EM) coupling and exchange coupling, etc. In this review, we focus on voltage control of ferromagnetic resonance (FMR) in multiferroics. ME coupling-induced FMR change is critical in microwave devices, where the electric field tuning of magnetic effective anisotropic field determines the tunability of the performance of microwave devices. Experimentally, FMR measurement technique is also an important method to determine the small effective magnetic field change in small amount of magnetic material precisely due to its high sensitivity and to reveal the deep science of multiferroics, especially, voltage control of magnetism in novel mechanisms like interfacial charge, spin-EM coupling and exchange coupling.

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Quantitative Determination on Ionic‐Liquid‐Gating Control of Interfacial Magnetism

et al. 2017

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Ionic-liquid gating on a functional thin film with a low voltage has drawn a lot of attention due to rich chemical, electronic, and magnetic phenomena at the interface. Here, a key challenge in quantitative determination of voltage-controlled magnetic anisotropy (VCMA) in Au/[DEME] [TFSI] /Co field-effect transistor heterostructures is addressed. The magnetic anisotropy change as response to the gating voltage is precisely detected by in situ electron spin resonance measurements. A reversible change of magnetic anisotropy up to 219 Oe is achieved with a low gating voltage of 1.5 V at room temperature, corresponding to a record high VCMA coefficient of ≈146 Oe V . Two gating effects, the electrostatic doping and electrochemical reaction, are distinguished at various gating voltage regions, as confirmed by X-ray photoelectron spectroscopy and atomic force microscopy experiments. This work shows a unique ionic-liquid-gating system for strong interfacial magnetoelectric coupling with many practical advantages, paving the way toward ion-liquid-gating spintronic/electronic devices.

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Quantifying thickness-dependent charge mediated magnetoelectric coupling in magnetic/dielectric thin film heterostructures

Cited by 35 publications

References 46 publications

Temperature dependence of electric field tunable ferromagnetic resonance lineshape in multiferroic heterostructure

Temperature dependence of electric field tunable ferromagnetic resonance lineshape in multiferroic heterostructure

Voltage control of ferromagnetic resonance

Quantitative Determination on Ionic‐Liquid‐Gating Control of Interfacial Magnetism

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