Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer

Abstract

The atomic layer deposition of high dielectric constant oxides like HfO2 on III-V substrates such as In0.53Ga0.47As leads to a poor interface, with the growth of In0.53Ga0.47As native oxides regardless of the surface pretreatment and passivation method. The presence of the native oxides leads to poor gate leakage current characteristics due to the low band gap of the native oxides and the presence of potential wells at the interface. In addition, the poor quality of this interface leads to very large interface state defect densities, which are detrimental to metal-oxide-semiconductor-based device performance. A wide band gap interlayer replacing the native oxide layer would remove the potential wells and provide a larger barrier to conduction. It may also assist in the improvement of the interface quality, but the problem remains as to how this native oxide interlayer cannot only be removed but prevented from regrowing. In this regard, the authors present electrical results showing that the atomic layer deposition (ALD) growth of a thin (∼1 nm) Al2O3 layer before the ALD growth of HfO2 causes a removal/reduction of the native oxides on the surface by a self-cleaning process without subsequent regrowth of the native oxides. As a result, there are significant improvements in gate leakage current densities, and significant improvements in the frequency dispersion of capacitance versus gate voltage, even when a defective In0.53Ga0.47As epitaxial layer on an InP substrate is employed. Measurements at different temperatures confirm that the frequency dispersion is mainly due to interface state defect responses and another weakly temperature dependent mechanism such as border traps, after accounting for the effects of nonideal In0.53Ga0.47As epitaxial layer growth defects where applicable.

Plasma Enhanced Atomic Layer Deposition Passivated HfO₂/AlN/In_0.53Ga_0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density

“…Obviously, post remote-plasma treatments employed in this work have also assisted to inhibit the formation of the native defect states that correlated to the interface trap density [14]. Utilizing the AlN-IPL pre-treatment and the remote-plasma post-treatment in an in situ PEALD process, the strong inversion behaviors can be achieved for HfO 2 /InGaAs devices with relative low EOT and D it values as compared to other literature reports [4], [11], [15][16][17].…”

Passivation of interfacial defects at III-V oxide interfaces

“…Suzuki et al, 104 O'Mahony et al, 105,106 and Kim et al 107 recently found a decrease in D it for depositing monolayers of Al2O3 before HfO2 in a GaAs:oxide gate stack. This carries over from other viewpoints.…”

Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C

“…Following the etching of the InAs/GaAs to form the active area of the device, and 10% (NH 4 ) 2 S surface passivation, the Al 2 O 3 (15 nm) top-gate oxide was formed by ALD. The ALD process is also reported to be effective in reducing or removing native oxides present on the III-V surface [21].…”