Electrical and carrier transport properties of the Au/Y2O3/n-GaN metal-insulator-semiconductor (MIS) diode with rare-earth oxide interlayer

Prasad, C. V. R. K.; Reddy, V. Rajagopal; Choi, Chel‐Jong

doi:10.1007/s00339-017-0894-5

Cited by 21 publications

(5 citation statements)

References 38 publications

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“…The existence of isolated trapping levels in the Si layer and the high-k HfO2 layer, which resulted in an estimated slope value in region II of 4.5, which is higher than 2, may be attributed to the space-chargelimited current (SCLC). The value of slope reduces to 2.4 when fitting was done in region-III, suggesting that the developed MIS SD has reached the trap-filling limit [30][31][32]. According to this research, there is a distinct transition in the carrier transport mechanism at the Mo/HfO2/n-Si MIS diode interfaces as a function of applied voltage.…”

Section: Fig 5 Plot Of Dv/dln (I) and H (I) Versus I For The Mo/hfo2/...mentioning

confidence: 77%

Microstructural and Current-voltage Characteristics in Mo/HfO2/n‑Si Based Metal-Insulator-Semiconductor (MIS) Diode using Different Methods for Optoelectronic Device Applications

et al. 2024

IJFMR

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This paper investigates the effect of hafnium dioxide (HfO2) thin film as interlayer between the Mo and n-Si semiconductor on the electrical characteristics of the Mo/n-Si Schottky diode (SD). The X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) results confirmed that HfO2 films were formed on the n-Si semiconductors. The image from SEM and AFM displays that the deposited HfO2 thin film had a uniform appearance good smoothness of the surface. The smooth surfaces of the insulating layer strongly influence the electrical properties of the diode. The electrical properties of the Mo/HfO2/n-Si metal/insulator/semiconductor (MIS) diode were obtained via current-voltage (I-V) measurements in the voltage range from −3 V to +3 V at room temperature. A better rectifying ability and a reduced reverse leakage current were demonstrated by the MIS diode. The MIS dide's barrier height (Bh) and ideality factor value were calculated to be 0.85 eV and 1.21, respectively. The MIS diode was able to achieve a higher b, which allowed the HfO2 interlayer to change BH. The calculated BH values from the I-V, Hernandez, Cheung, and Norde approaches were comparable to one another, demonstrating their validity and consistency. The MIS diode's forward bias log (I) - log (V) curve demonstrated that it was ohmic in low-voltage regimes and that conduction was space-charge-limited in high-voltage regimes. However, for the MIS diode, the Poole-Frenkel and Schottky emissions are the dominant current conduction mechanisms in the lower and higher bias regions. These outcomes indicate that the HfO2 film can be chosen as dielectric materials in the construction of MIS devices.

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Section: Fig 5 Plot Of Dv/dln (I) and H (I) Versus I For The Mo/hfo2/...mentioning

confidence: 77%

Microstructural and Current-voltage Characteristics in Mo/HfO2/n‑Si Based Metal-Insulator-Semiconductor (MIS) Diode using Different Methods for Optoelectronic Device Applications

et al. 2024

IJFMR

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“…Due to incorporation of fullerene nanoparticles, the ideality factor has been reduced from 3.787 to 1.495. High ideality factor (n>1) can be ascribed to low Schottky barrier's wide distribution and can also due to the interface doping or specific interface structure [28][29][30][31]. Recombination generation, and tunneling may lead to a greater than unity value of ideality factor.…”

Section: Fig 5 Ln I-v Plot Of Organic Device Without and With C60mentioning

confidence: 99%

Characterization of Electrical Parameters of Copper Phthalocyanine Based Organic Electronic Device in Presence of Fullerene Nanoparticles

Sen

Manik

2021

AMR

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Characterization of electrical parameters of Copper Phthalocyanine dye has been done in the present work. In the context of electrical parameters, the Schottky barrier and ideality factor of the organic device has been measured and the effects of fullerene nanoparticles on these parameters have been studied. Analysis of electrical parameters has been done by the current-voltage characteristics of the device. The influence of fullerene nanoparticles lessens the Schottky barrier to 0.71 eV from 0.75 eV. The current flow is assumed to be injection limited as the Schottky barrier is greater than 0.3 eV - 0.4 eV. The Schottky barrier is also estimated by the Norde method. Norde's method shows lessening of barrier height from 0.70 eV to 0.65 eV under the influence of fullerene nanoparticles. The measured ideality factor value reduces from 3.787 to 1.495 in presence of fullerene nanoparticles. The charge injection mechanism at metal-organic contact gets influenced by the interfacial Schottky barrier height. Decrease in both Schottky barrier and ideality factor attribute to the increase in charge flow and it allows a reduction in the device’s transition voltage from 2.5 V to 1.0 V.

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“…Chen et al [4] reported Al/Al 2 O 3 /Ga 2 O 3 metal-insulator-semiconductor (MIS) detectors with ultra-thin Ga 2 O 3 to restrain the performance decay for weak signal detection. Another merit of the MIS detectors [6][7][8] is to increase the energy barrier, which remarkably reduces the dark current and suppresses the IPE effect. However, for such an ultra-thin absorbing medium, the light absorption efficiency is sacrificed.…”

Section: Introductionmentioning

confidence: 99%

Ga₂O₃ metal–insulator-semiconductor solar-blind photodiodes with plasmon-enhanced responsivity and suppressed internal photoemission

Zhang

Ren

et al. 2023

J. Phys. D: Appl. Phys.

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Metal-semiconductor-metal (MSM) architectures are popular in achieving high-responsivity Ga2O3 solar-blind photodetectors (SBPDs), whereas the hot-electron-induced internal photoemission (IPE) effect restricts the detecting performance. Herein, we demonstrate the rational design of an Al/Al2O3/Ga2O3 metal-insulator-semiconductor (MIS) SBPD that has merits of enhanced responsivity, suppressed sub-gap response and ultralow dark current based on the simulation results obtained by using Lumerical software. For the cylindrical patterned detectors with Al/Al2O3/Ga2O3 MIS structures, the optimized dimensions of Al electrodes with a conformed ultra-thin (2 nm) Al2O3 layer well support the surface plasmon polariton (SPP) resonances at 250 nm, thus improving the photoresponsivity to be 74 mA/W. Furthermore, the sandwiched Al2O3 layer lifts up the barrier for hot electrons in electrodes, which significantly suppresses the IPE-induced sub-gap photoresponse by more than 105 in magnitude with respect to the Al/Ga2O3 MSM counterpart. Optical and electrical field distributions are overlapped in cylindrically patterned MIS detectors, simultaneously improving the excitation and collection efficiencies of excess carriers and resulting in the 103-boosted rejection ratio.

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Electrical and carrier transport properties of the Au/Y2O3/n-GaN metal-insulator-semiconductor (MIS) diode with rare-earth oxide interlayer

Cited by 21 publications

References 38 publications

Microstructural and Current-voltage Characteristics in Mo/HfO2/n‑Si Based Metal-Insulator-Semiconductor (MIS) Diode using Different Methods for Optoelectronic Device Applications

Microstructural and Current-voltage Characteristics in Mo/HfO2/n‑Si Based Metal-Insulator-Semiconductor (MIS) Diode using Different Methods for Optoelectronic Device Applications

Characterization of Electrical Parameters of Copper Phthalocyanine Based Organic Electronic Device in Presence of Fullerene Nanoparticles

Ga₂O₃ metal–insulator-semiconductor solar-blind photodiodes with plasmon-enhanced responsivity and suppressed internal photoemission

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Electrical and carrier transport properties of the Au/Y2O3/n-GaN metal-insulator-semiconductor (MIS) diode with rare-earth oxide interlayer

Cited by 21 publications

References 38 publications

Microstructural and Current-voltage Characteristics in Mo/HfO2/n‑Si Based Metal-Insulator-Semiconductor (MIS) Diode using Different Methods for Optoelectronic Device Applications

Microstructural and Current-voltage Characteristics in Mo/HfO2/n‑Si Based Metal-Insulator-Semiconductor (MIS) Diode using Different Methods for Optoelectronic Device Applications

Characterization of Electrical Parameters of Copper Phthalocyanine Based Organic Electronic Device in Presence of Fullerene Nanoparticles

Ga2O3 metal–insulator-semiconductor solar-blind photodiodes with plasmon-enhanced responsivity and suppressed internal photoemission

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Product

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Ga₂O₃ metal–insulator-semiconductor solar-blind photodiodes with plasmon-enhanced responsivity and suppressed internal photoemission