Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications

Abstract

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Very low R/sub ON/ measured on 4H-SiC accu-MOSFET high power device

“…The design of such a device [8] is proposed here with a special view on its specific on-resistance studied in simulation with the DESSIS ® ISE software [9], and in experimental measurements. This device has to work under high junction temperature and the thermal aspect will not be discussed here, but they are given elsewhere [10]. A current limiting device must have the lowest resistance as possible for the normal use, the End User requirements specify a value close to 10 mWcm 2 , high current saturation density and simple technological process.…”