Very low R/sub ON/ measured on 4H-SiC accu-MOSFET high power device

Abstract

This paper describes the I-V characteristics obtained from a 4H-SiC current limiting device. Some specific aspects of the specific on-resistance are discussed in simulation with the DESSIS ISE software. The device behaviors place it in the field of the best Implanted Channel MOSFET (IC-MOSFET) obtained in the literature. The best on-resistance measured is 13 mWcm 2 and the saturation current density reaches 900 Acm -2 .

SiC power semiconductor devices for new applications in power electronics

“…The resulting high power density must not cause the component failure. Two specific current limiting devices (CLD) have been studied [18], [20], [19] taking into account previous considerations. Figure 9 shows a cross section schema of the VJFET and the main parameters to adjust.…”