SiC power semiconductor devices for new applications in power electronics

Planson, Dominique; Tournier, Dominique; Bevilacqua, Pascal; Dheilly, Nicolas; Morel, Hervé; Raynaud, Christophe; Lazar, Mihai; Bergogne, Dominique; Allard, Bruno; Chante, Jean-Pierre

doi:10.1109/epepemc.2008.4635632

Cited by 10 publications

(6 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, the on-resistance ranges shown in [22], i.e. 2.7 mΩ·cm 2 to 55 mΩ·cm 2 , are still considerably higher than the theoretical limit of 1 mΩ·cm 2 [24], due to the low channel mobility caused by poor SiO 2 /SiC interface quality [27]. One approach to further lower on-resistance uses an Implantation and Epitaxial MOSFET (IEMOSFET) as developed in [28] that achieves a 1.8 mΩ·cm 2 on-resistance.…”

Section: Use Of Wide-bandgap Semiconductormentioning

confidence: 97%

See 1 more Smart Citation

High current and thermal transient design of a SiC SSPC for aircraft application

Guo

Bhat

Aravamudhan

et al. 2011

2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

View full text Add to dashboard Cite

Solid-State Power Controllers (SSPCs) are critical components in the development of electric aircraft and must be small in size, fast in response, and have high reliability. The development of Silicon Carbide (SiC) semiconductor switches provides a series of improvements for the SSPCs in both electrical and thermal performances. In the proposed SSPC design, SiC MOSFETs die are mounted on cast-aluminum traces, under which are an aluminum nitride (AlN) layer and an aluminum composite baseplate. The concept of i 2 t and its application in solid state protection is discussed. Transient thermal characterizations of SiC MOSFETs are provided on this nearly-all-aluminum package by Finite Element Analysis (FEA). Electrical experiments are combined to demonstrate critical transient thermal performance of a 120A-nominal/1200A-fault, 320Vdc SSPC designed for 350˚C SiC transient junction temperature.

show abstract

Section: Use Of Wide-bandgap Semiconductormentioning

confidence: 97%

“…For the same breakdown voltage, devices made from 2H-GaN have the lowest theoretical on-state resistance, followed by 4H-SiC, 6H-SiC, and 3C-SiC [24]. Among those 4H-SiC is the most promising material due to its quality of crystal growth, maturity of manufacturing process and material characteristics [25].…”

Section: Use Of Wide-bandgap Semiconductormentioning

confidence: 98%

High current and thermal transient design of a SiC SSPC for aircraft application

Guo

Bhat

Aravamudhan

et al. 2011

2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

View full text Add to dashboard Cite

show abstract

“…Nowadays, the technological advances in the power electronics field, allows the voltage levels in HVDC networks to be adjusted. Indeed, recent researches showed that Silicon Carbide (SiC) semiconductors can operate at higher voltages than Silicon (Si) semiconductors [2].…”

Section: Introductionmentioning

confidence: 99%

Comparison between numerical and analytical methods of AC resistance evaluation for Medium Frequency Transformers: Validation on a prototype

Pereira

Lefebvre

Sixdenier

et al. 2015

2015 IEEE Electrical Power and Energy Conference (EPEC)

View full text Add to dashboard Cite

In the future, Medium Frequency Transformers (MFT with a frequency range 5 kHz to 100 kHz) will be major components in DC-DC converter applications, for both Medium Voltage Direct Current (MVDC) and High Voltage Direct Current (HVDC) networks. Importantly, the corresponding power losses should be accurately calculated in order to reach performance targets (very high efficiency). This paper reviews the most known analytical models which are used to calculate the medium frequency resistance for several winding technologies. In order to qualify these models in a future design flow, we compare the analytical model results with measurements and 3D finite element (3DFE) electromagnetic simulations. The adopted design flow-chart has been tested on a 17 kHz-180 kVA prototype transformer that will be used in a Dual Active Bridge (DAB).

show abstract

“…These characteristics make them suitable as etch masking layers during advanced semiconductor, solar cell and micro-electro mechanical system (MEMS) fabrication. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] Examples of these applications include deep etching of glass or silicon, protection of low-K dielectric films, as a stop layer in STI CMP, etc. 10,12,14 The planar surface necessary to use a-SiC as a hard mask in these applications can be potentially achieved using chemical mechanical planarization (CMP).…”

mentioning

confidence: 99%

Effect of Transition Metal Compounds on Amorphous SiC Removal Rates

Lagudu

Babu

2014

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

We show here that transition metal compounds when used as additives to silica dispersions enhance a-SiC removal rates (RRs). Silica slurries containing KMnO 4 gave RRs as high as 2000 nm h −1 at pH 4. Addition of CuSO 4 to this slurry further enhanced the RRs to ∼3500 nm h −1 at pH 6. Furthermore, addition of a low concentration of 250 ppm Brij-35 to this slurry suppressed the RRs of SiO 2 to zero, while retaining the RRs of a-SiC at ∼2700 nm h −1 , a combination of RRs that is appropriate for hard mask polishing. The underlying mechanisms causing the enhancement in the RRs of a-SiC in the presence of transition metal compounds is discussed based on the RR data and XPS analysis of post-polished wafer surfaces. It is shown that a mixed redox system consisting of the oxidation of a-SiC by KMnO 4 enhanced by the catalytic activity of the Cu(II) salt is responsible for the rapid oxidation of a-SiC and the observed enhancement in polish rate with silica based slurries. The adsorption characteristics of Brij-35 on the oxide and carbide surfaces are described based on thermogravimetry data and in achieving the desired polish rate selectivity. Amorphous SiC (a-SiC) thin films, deposited at a low temperature of ∼400• C using a plasma enhanced chemical vapor deposition (PECVD) process, have excellent chemical and temperature resistance and a wide bandgap. These characteristics make them suitable as etch masking layers during advanced semiconductor, solar cell and micro-electro mechanical system (MEMS) fabrication.1-16 Examples of these applications include deep etching of glass or silicon, protection of low-K dielectric films, as a stop layer in STI CMP, etc. 10,12,14 The planar surface necessary to use a-SiC as a hard mask in these applications can be potentially achieved using chemical mechanical planarization (CMP).14 Since, the a-SiC hard mask layers typically protect an underlying dielectric material, generally SiO 2 , the CMP polish process must be selective to it. To the best of our knowledge slurries that can selectively polish SiC over SiO 2 have not been reported.Early work on developing slurries for 6H-SiC CMP showed that Cr 2 O 3 -based slurries increased the removal rates (RRs) compared to the traditional abrasives and oxidizers. 24 reported that slurries containing "soft functionalized particles" coated with several layers of "transition metal catalysts" yielded RRs ranging from 100 nm h −1 to 2500 nm h −1 depending on the concentration of the additives, the abrasives used and the operating conditions. The final surface quality was reported to be very good. In all these cases where high RRs were reported, 22,24 the effect of pressure and other operating conditions, the role of pH, the mechanism of the polish process and the role of various additives that are typically required for evaluating CMP processes were not discussed. More importantly, no slurries that lead to a selective removal of any type of SiC over * Electrochemical Society Active Member.z E-mail: babu@clarkson.edu SiO 2 that is needed for mask ...

show abstract

SiC power semiconductor devices for new applications in power electronics

Abstract: This paper addresses the benefits of SiC semiconductor, owning excellent physical properties able to fulfill new scope of applications in terms of high temperature, high voltage and for more specific applications. Devices and applications developed at Ampere laboratory are detailed.

Cited by 10 publications

References 13 publications

High current and thermal transient design of a SiC SSPC for aircraft application

High current and thermal transient design of a SiC SSPC for aircraft application

Comparison between numerical and analytical methods of AC resistance evaluation for Medium Frequency Transformers: Validation on a prototype

Effect of Transition Metal Compounds on Amorphous SiC Removal Rates

Contact Info

Product

Resources

About