Electrical and Optical Characteristics of Ta₂O₅ Thin Films Deposited by Electron‐Beam Vapor Deposition

Abstract

Summary: Ta2O5 is a material with good perspectives for many applications in modern electronics and information technologies. Several deposition techniques of thin Ta2O5 films have been suggested. Reliable information is still needed, however, on structural, electrical and optical parameters of the films, and their dependence on the deposition technique. We have deposited Ta2O5 thin films by electron‐beam evaporation of Ta2O5 powder onto Si, tantalum and glass substrates. The resistivity of the films with various thicknesses was measured by four‐point probe method before and after annealing in an oxygen atmosphere. The reflectance in the IR region depending on the substrate and film thickness was shown.

Graphene–oxide interface for optoelectronic synapse application

“…In this work, we use a graphene/Ta 2 O 5 /graphene heterostructure to demonstrate optoelectronic synapses . Ta 2 O 5 has shown good platform on CMOS technology 34 , 35 . It also has a high energy bandgap of ~ 4 eV which facilitates the realization of optoelectronic synaptic characteristics in the visible spectrum 36 .…”

“…It also has a high energy bandgap of ~ 4 eV which facilitates the realization of optoelectronic synaptic characteristics in the visible spectrum 36 . It has been shown that Ta 2 O 5 deposited by e-beam instead of RF sputtering gives a narrow gap of visible light absorption 34 , 35 , 37 . which is the mechanism used for deposition in this work.…”

Effects of the post-annealing ambience on the microstructure and optical properties of tantalum oxide films prepared by pulsed laser deposition

“…deposition [14,15], electron-beam evaporation [16,17], ion-beam sputter deposition [18,19], sol-gel spinning coating [20], PLD [21] and so on. For PLD method, it is easy to yield substoichiometric tantalum oxide (TaO x , x<2.5) films resulted from deficiency of oxygen.…”

Optimization of Ta_2O_5 optical thin film deposited by radio frequency magnetron sputtering

“…Ta 2 O 5 is one of the more commonly used high refractive index materials in multilayer dielectric mirrors due to their high transmittance and low optical loss [5,6]. Various techniques have been used to deposit tantalum pentoxide thin films such as reactive magnetron sputtering [7], electron-beam evaporation [8], ion beam sputtering [9], and ion-assisted deposition [6]. Using these methods, film properties were reported [10][11][12].…”