Electrical and Optical Properties of Ferroelectric Bi4Ti3O12 Single Crystals

Cummins, S. E.; Cross, L. E.

doi:10.1063/1.1656542

Cited by 842 publications

(278 citation statements)

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“…The synthesis of the BIT implemented by us (LO-CEM), in shorter times of: milling, calcining and sintering, resulted in a phase that agrees with the literature herewith [21][22][23][24]. The procedure described on Table 1, shows that we duly obtained the orthorhombic phase, while grinding in a lesser time as in Figure 1.…”

Section: Methodssupporting

confidence: 64%

“…BIT single crystals have a low dielectric constant (K ∼ 244 at 1 KHz) and a very high Curie temperature (T C = 675˚C), which makes it useful for various applications, such as memory elements, optical displays, piezoelectric and piroelectric devices in a wide temperature range from 20˚C to 600˚C. Below room temperature it shows an orthorhombic Fmmm symmetry, which exhibits ferroelectric properties [1,2].…”

Section: Introductionmentioning

confidence: 99%

“…Ferroelectric Bi 4 Ti 3 O 12 (BIT) ceramics are good candidates for the application devices, due to their high dielectric constant, high Curie temperature and high breakdown strength [1][2][3]. BIT ceramics were conventionally prepared by the solid-state reaction process.…”

Section: Introductionmentioning

confidence: 99%

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Preparation of Bi4Ti3O12 (BIT) Ceramics via a High-Energy Ball Milling Process Doped with Multi-Walled Carbon Nanotubes (MWNTs)

Pinheiro¹,

Saraiva²,

Filho³

et al. 2013

MSA

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We prepared the Nano-sized bismuth titanate Bi 4 Ti 3 O 12 (BIT) powders, through a high-energy ball milling process from their oxides Bi 2 O 3 and TiO 2 . This BIT phase can be formed after a milling process for 40 min. With an increasing milling time, this particle size of mixture is gradually reduced, thus, we have mostly an amorphous phase. The BIT ceramics were duly obtained by sintering the synthesized powders at temperatures ranging from 850˚C to 1000˚C. The BIT ceramics sintered at 1020˚C for 1 h, exhibiting a density with 7.52 g/cm 3 of a crystaline phase and a dielectric of K = 288.11 (100 Hz), as well as a dielectric loss of 0.05 (100 kHz). The High-energy ball milling process is a promising way to prepare BIT ceramics. After the preparation of the BIT, we doped it with the Multi-Walled Carbon Nanotubes which are properly obtained by a chemical vapour deposition (CVD), using nickel as a catalyst, as well as using acetilene at 720˚C, and then proceeded with the dielectric and optical measurements.

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Section: Methodssupporting

confidence: 64%

Section: Introductionmentioning

confidence: 99%

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Preparation of Bi4Ti3O12 (BIT) Ceramics via a High-Energy Ball Milling Process Doped with Multi-Walled Carbon Nanotubes (MWNTs)

Pinheiro¹,

Saraiva²,

Filho³

et al. 2013

MSA

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“…Bismuth titanate is composed of a triple perovskite unit sandwiched between (Bi 2 O 2 ) 2+ layers. The monoclinic BIT unit possesses the lattice parameters of a = 0.5450, b = 0.54059, and c = 3.2832 nm, and exhibits the spontaneous polarizations P s = 50 and 4 mC/cm 2 along a-and c-axes, respectively [3]. Therefore, films having a larger fraction of a-axis-oriented grains should exhibit better ferro-and piezoelectric properties.…”

Section: Introductionmentioning

confidence: 99%

Piezoelectric properties of Bi4Ti3O12 thin films annealed in different atmospheres

Simões

Riccardi

González

et al. 2007

Materials Research Bulletin

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Bismuth titanate (Bi 4 Ti 3 O 12 -BIT) films were evaluated for use as lead-free piezoelectric thin-films in micro-electromechanical systems. The films were grown by the polymeric precursor method on Pt/Ti/SiO 2 /Si (1 0 0) (Pt) bottom electrodes at 700 8C for 2 h in static air and oxygen atmospheres. The domain structure was investigated by piezoresponse force microscopy (PFM). Annealing in static air leads to better ferroelectric properties, higher remanent polarization, lower drive voltages and higher piezoelectric coefficient. On the other hand, oxygen atmosphere favors the imprint phenomenon and reduces the piezoelectric coefficient dramatically. Impedance data, represented by means of Nyquist diagrams, show a dramatic increase in the resistivity for the films annealed in static air atmopshere. #

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“…El problema más importante es la conductividad relativamente alta que presentan muchos FLB en el plano ab donde se ubica la polarización espontánea (6,7). Esto dificulta la polarización de estos materiales preparados en forma cerámica y, por consiguiente, la obtención de respuesta piezoeléctrica.…”

Section: Introductionunclassified

Conductividad eléctrica en corriente alterna de materiales cerámicos aurivillius de composición PbxBi4Ti3+xO12+3x, x=0,1,2 y 3

Lascano¹,

Caballero²,

Villegas³

et al. 2004

Bol. Soc. Esp. Ceram. Vidr.

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Se ha estudiado la conductividad eléctrica en corriente alterna (ca) de la serie de materiales cerámicos ferroeléctricos con estructura Aurivillius: Pb x Bi 4 Ti 3+x O 12+3x , donde x = 0,1,2 y 3. El estudio se realiza a partir de la medida de la impedancia sobre muestras texturadas y no texturadas. La conductividad eléctrica disminuye sucesiva y aproximadamente en un orden de magnitud con el incremento sucesivo de un mol de titanato de plomo en la estructura del titanato de bismuto. Se mantiene la anisotropía de la conductividad entre el plano ab y el eje c de la estructura cristalina. La respuesta parece estar relacionada tanto con la variación del número de vacantes de oxígeno presentes en la estructura cristalina de los materiales, como con la variación de la relación de esbeltez de las placas que componen la microestructura de las muestras. Se presentan también los valores de energía de activación del proceso de conducción eléctrica en diferentes rangos de temperatura, tanto en la fase ferroeléctrica como en la paraeléctrica. Palabras clave: Aurivillius, conductividad eléctrica, ferroelectricidad, texturaElectric conductivity of Aurivillius ceramic materials of composition Pb x Bi 4 Ti 3+x O 12+3x , x=0,1,2 y 3.The ac electric conductivity of both textured and non textured Aurivillius ferroelectric ceramics Pb x Bi 4 Ti 3+x O 12+3x , where x = 0,1,2 and 3, has been studied by impedance measurements. The electrical conductivity decreases approximately one order of magnitude with the incorporation of a mol of lead titanate into the bismuth titanate structure. The anisotropy of the conductivity is kept between the ab plane and the c axis. The response seems to be related to the number of oxygen vacancies present in the crystalline structure of the materials, as well as to the aspect ratio of the grains. The activation energy values of the electrical conduction process are presented for both the ferroelectric and paraelectric phases.Key words: Aurivillius, electric conductivity, ferroelectricity, texture INTRODUCCIÓNUn grupo de materiales piezoeléctricos que ha alcanzado gran importancia en los últimos años es el de los Ferroeléctricos con Estructura Laminar de Bismuto (FLB), o tipo Aurivillius. Estos materiales poseen estructura laminar, que consiste en capas octaédricas tipo perovskita, entre las que se intercalan láminas de (Bi 2 O 2 ) 2+ (1). Debido a sus propiedades, varios compuestos FLB son candidatos a utilizarse como piezoeléctricos de alta temperatura de operación, en dispositivos electroópticos, como sensores de presión y en memorias no volátiles ferroeléctricas (2-5). Sin embargo, se deben superar ciertos problemas antes de extender la aplicación tecnológica de materiales cerámicos FLB, aunque su utilización en lámina delgada parece estar más madura.El problema más importante es la conductividad relativamente alta que presentan muchos FLB en el plano ab donde se ubica la polarización espontánea (6,7). Esto dificulta la polarización de estos materiales preparados en forma cerámica y, por consiguiente...

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Electrical and Optical Properties of Ferroelectric Bi4Ti3O12 Single Crystals

Cited by 842 publications

References 10 publications

Preparation of Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> (BIT) Ceramics via a High-Energy Ball Milling Process Doped with Multi-Walled Carbon Nanotubes (MWNTs)

Preparation of Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> (BIT) Ceramics via a High-Energy Ball Milling Process Doped with Multi-Walled Carbon Nanotubes (MWNTs)

Piezoelectric properties of Bi4Ti3O12 thin films annealed in different atmospheres

Conductividad eléctrica en corriente alterna de materiales cerámicos aurivillius de composición Pb<sub>x</sub>Bi<sub>4</sub>Ti<sub>3+x</sub>O<sub>12+3x</sub>, x=0,1,2 y 3

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Electrical and Optical Properties of Ferroelectric Bi4Ti3O12 Single Crystals

Cited by 842 publications

References 10 publications

Preparation of Bi&lt;sub&gt;4&lt;/sub&gt;Ti&lt;sub&gt;3&lt;/sub&gt;O&lt;sub&gt;12&lt;/sub&gt; (BIT) Ceramics via a High-Energy Ball Milling Process Doped with Multi-Walled Carbon Nanotubes (MWNTs)

Preparation of Bi&lt;sub&gt;4&lt;/sub&gt;Ti&lt;sub&gt;3&lt;/sub&gt;O&lt;sub&gt;12&lt;/sub&gt; (BIT) Ceramics via a High-Energy Ball Milling Process Doped with Multi-Walled Carbon Nanotubes (MWNTs)

Piezoelectric properties of Bi4Ti3O12 thin films annealed in different atmospheres

Conductividad eléctrica en corriente alterna de materiales cerámicos aurivillius de composición Pb<sub>x</sub>Bi<sub>4</sub>Ti<sub>3+x</sub>O<sub>12+3x</sub>, x=0,1,2 y 3

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Preparation of Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> (BIT) Ceramics via a High-Energy Ball Milling Process Doped with Multi-Walled Carbon Nanotubes (MWNTs)

Preparation of Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> (BIT) Ceramics via a High-Energy Ball Milling Process Doped with Multi-Walled Carbon Nanotubes (MWNTs)