Electrical and Optical Properties of Carbon Doped Cubic GaN Epilayers Grown Under Extreme Ga Excess

As, D. J.; Pacheco‐Salazar, D. G.; Potthast, S.; Lischka, K.

doi:10.1557/proc-798-y8.2

Cited by 3 publications

(5 citation statements)

References 11 publications

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“…455,456 The donor, having a binding energy of 25 meV, is apparently the same as in undoped cubic GaN. 444 As and co-workers 440,454,[456][457][458] also observed a broad red-yellow luminescence band with peaks at about 2.12 and 1.89 eV in C-doped GaN. As can be seen in Fig.…”

Section: B Doped Materials 1 Carbon Dopingmentioning

confidence: 84%

“…The reported hole concentration and hole mobilities were 6.1ϫ 10 18 cm −3 and 23.5 cm 2 / V s, respectively, in c-GaN. 440 In samples with a hole concentration below approximately 10 17 cm −3 the hole mobility exceeded 200 cm 2 /V s. 440 Doping with carbon results in a relatively narrow PL band at about 3.08 eV and a very broad band between 1.8 and 2.3 eV, as depicted in Fig. 79.…”

Section: B Doped Materials 1 Carbon Dopingmentioning

confidence: 86%

“…This material is attractive, in particular, due to high mobilities and controlled doping concentrations of free carriers already achieved in both n and p types. 440,441 A. Undoped material…”

Section: Defect-related Luminescence In Cubic Ganmentioning

confidence: 99%

“…As et al 440,454,455 reported p-type doping of cubic GaN with carbon by plasma-assisted MBE on GaAs substrates. The reported hole concentration and hole mobilities were 6.1ϫ 10 18 cm −3 and 23.5 cm 2 / V s, respectively, in c-GaN.…”

Section: B Doped Materials 1 Carbon Dopingmentioning

confidence: 99%

“…V B 3. As et al 440,454 proposed that the deep donor is a C N plex. Note that the energy level of this donor could be estimated from the high-energy cutoff of the yellow band where the ZPL is expected at about 2.3 eV, accounting for the Coulomb interaction in deep DAP which may be rather strong.…”

Section: B Doped Materials 1 Carbon Dopingmentioning

confidence: 99%

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Luminescence properties of defects in GaN

Reshchikov¹,

Morkoç̌²

2005

Journal of Applied Physics

1,827

119

1,666

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Gallium nitride ͑GaN͒ and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet ͑UV͒ emitters and detectors ͑in photon ranges inaccessible by other semiconductors͒ and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects ͑vacancies, interstitial, and antisites͒, intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of other impurities, such as C, Si, H, O, Be, Mn, Cd, etc., on the luminescence properties of GaN are also reviewed. Further, atypical luminescence lines which are tentatively attributed to the surface and structural defects are discussed. The effect of surfaces and surface preparation, particularly wet and dry etching, exposure to UV light in vacuum or controlled gas ambient, annealing, and ion implantation on the characteristics of the defect-related emissions is described.

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Section: B Doped Materials 1 Carbon Dopingmentioning

confidence: 84%

Section: B Doped Materials 1 Carbon Dopingmentioning

confidence: 86%

Section: Defect-related Luminescence In Cubic Ganmentioning

confidence: 99%

Section: B Doped Materials 1 Carbon Dopingmentioning

confidence: 99%

Section: B Doped Materials 1 Carbon Dopingmentioning

confidence: 99%

See 3 more Smart Citations

Luminescence properties of defects in GaN

Reshchikov¹,

Morkoç̌²

2005

Journal of Applied Physics

1,827

119

1,666

View full text Add to dashboard Cite

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Effect of light Si-doping on the near-band-edge emissions in high quality GaN

Zhao

Jiang

et al. 2012

Journal of Applied Physics

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We have investigated the effect of light Si-doping on the optical properties of high quality GaN films with the method of low temperature photoluminescence. It is found that the peak (Ix) at 3.473 eV always appears in the photoluminescence spectra of lightly Si-doped GaN. The relative intensity of peak Ix to heavy-hole free exciton peak increases linearly with the increasing concentration of Si doping, providing a strong support to the assignment that Ix originates from inelastic scattering of free excitons by Si donors. In addition, a rarely reported peak (Px) at 3.365 eV can only be clearly observed in the PL spectrum of unintentionally doped GaN sample. Its intensity is found to reduce dramatically with the decrease of residual carbon concentration based on the secondary ion mass spectrometry analysis. Px is attributed to the excitons bound to carbon-related complex defects.

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Photoluminescence in wurtzite GaN containing carbon

2005

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We studied photoluminescence (PL) from a set of GaN layers grown on sapphire substrates by metalorganic chemical vapor deposition with the concentration of carbon varied by the growth conditions. One of the remarkable features in these samples is the extremely low intensity of the shallow donor-acceptor pair band. Analysis of the PL data gives the shallow acceptor concentration of less than 1014 cm-3 in most of the C-doped GaN layers. This result shows that C does not form a shallow acceptor, CN, in appreciable concentrations in wurtzite GaN. As for the YL band, there is no clear correlation between its intensity and the degree of C-doping. The question of identification of the deep acceptor responsible for the YL band in undoped and C-doped GaN still remains to be solved.

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Electrical and Optical Properties of Carbon Doped Cubic GaN Epilayers Grown Under Extreme Ga Excess

Cited by 3 publications

References 11 publications

Luminescence properties of defects in GaN

Luminescence properties of defects in GaN

Effect of light Si-doping on the near-band-edge emissions in high quality GaN

Photoluminescence in wurtzite GaN containing carbon

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