Amorphous fluorocarbon polymer films (a-C:F) have been grown by plasma enhanced chemical vapor deposition from a new precursor, namely perfluoro-octane (C8F18) vapor. The dielectric and insulating properties of the films have been assessed by means of capacitance–voltage and current–voltage characteristics, breakdown voltage measurements, scanning electron microscopy, and ellipsometric analyses. In the investigated frequency range, 120 Hz–1 MHz, the films have a low dielectric constant (≈2.4) and a low dielectric loss (⩽3×10−2). The electrical conduction mechanism is ohmic in the weak electric field regime, with a bulk resistivity of 4×1015 Ω cm, and a trap modulated space charge limited conduction in the strong electric field regime. For a film thickness between 1 and 12 μm, the dielectric strength varies with film thickness according to EB∼h−0.53. For a film thickness of 1 μm the film dielectric strength was 2.7 MV/cm while for 12 μm it decreased to 0.9 MV/cm. Measurements of the breakdown voltage in nitrogen gas in the low pressure regime between a-C:F coated cathode and copper anode showed an enhancement of the breakdown voltage by a factor of 2.5 with respect to the case of copper–copper electrodes.