Electrical and Optical Properties of Unrelaxed InAs1 –xSbx Heteroepitaxial Structures

The results of a study of multilayer photodiodes based on InAs1- x Sb x solid solutions (0.3 < x <0.4), with a long-wavelength cut-off of λ 0.1 ≈ 11 μm at room temperature are presented. The current-voltage and spectral characteristics of photosensitivity and electroluminescence were analyzed in the temperature range of 80 ÷ 300 K. Experimental samples of photodetectors are characterized by a quantum efficiency of 0.23 at 150 K and a diffusion mechanism of current flow at least in the 200-300 K range. The detectivity of the immersion lens PD at the maximum has values of at least D*8 µm = 8·108 and D* 5.5 µm = 1010 cm·Hz1/2W-1 at 300 and 150 K, respectively.

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Electrical and Optical Properties of Unrelaxed InAs1 –xSbx Heteroepitaxial Structures

Cited by 2 publications

References 4 publications

Obtaining of Al Nanosized Thin Layers and Their Structural Properties

Obtaining of Al Nanosized Thin Layers and Their Structural Properties

Long-wave infrared InAs0.6Sb0.4 photodiodes grown onto n-InAs substrates

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