Electrical and optical properties of Al-doped ZnO and ZnAl2O4 films prepared by atomic layer deposition

Hou, Qiongqiong; Meng, Fanbin; Sun, Jiaming

doi:10.1186/1556-276x-8-144

Cited by 117 publications

(58 citation statements)

References 23 publications

(29 reference statements)

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“…mol% concentration. This relationship in our results is consistent with what has been reported by Hou et al [22] in the study of electrical and optical properties of Al doped ZnO and ZnAl 2 O 4 . The average lattice spacing was estimated to be 0.24 nm, which corresponds with (311) lattice spacing of the ZnAl 2 O 4 reported by Zawadzki et al [23].…”

Section: X-ray Diffractionsupporting

confidence: 94%

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Effects of Pb2+ ions concentration on the structure and PL intensity of Pb-doped ZnAl2O4 nanocrystals synthesized using sol–gel process

Motloung

Dejene

Swart

et al. 2014

J Sol-Gel Sci Technol

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Undoped and Pb 2? -doped ultrafine cubic zinc aluminate (ZnAl 2 O 4 ) hosts were successfully prepared at a relatively low temperature (*80°C) using the sol-gel method. The concentration of Pb 2? was varied from 0 to 5 mol%. The TGA showed that the minimum annealing temperature required to obtain single phase ZnAl 2 O 4 must be above 400°C. The XRD data revealed that all the annealed samples were single phase crystalline structures and the estimated crystallites size were in the range of 21-30 nm in diameter. The FTIR results suggest that heattreating can destroy some of the bonds. The surface morphology of the phosphors was influenced by the Pb 2? mol%. Undoped and Pb 2? -doped ZnAl 2 O 4 nanoparticles exhibit the violet emission at slightly different positions. The slight peak shifts suggests the possibilities that the luminescence centre can either be due to the defects level in the host or Pb 2? ions. The emission peaks at 390 and 399 nm are ascribed to the typical UV transitions 3 P 0,1 ? 1 S 0 in Pb 2? ion. At the higher Pb 2? mol%, the luminescence quenching behaviour occurs, which suggests that doping with Pb 2? ions is accompanied by the introduction of new defect sites that enhance non-radiative recombination of the excited electrons.

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Section: X-ray Diffractionsupporting

confidence: 94%

“…This is due to the substitution of Zn 2? (ionic radius 0.74 Å ) [22] with bigger Pb 2? (ionic radius 1.01-1.40 Å ) [24] ions.…”

Section: X-ray Diffractionmentioning

confidence: 99%

Effects of Pb2+ ions concentration on the structure and PL intensity of Pb-doped ZnAl2O4 nanocrystals synthesized using sol–gel process

Motloung

Dejene

Swart

et al. 2014

J Sol-Gel Sci Technol

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show abstract

“…The measured resistivity of the AZO films was 1.5 × 10 −4 ·cm, which is similar to the experimental values obtained in several reports [33,34]. Higher Al contents in the AZO composition would increase the electrical resistivity due to the transformation of the conductor AZO film into insulator.…”

Section: Optimization Of Ald Growth Rates Of Conductive Be Te and Dsupporting

confidence: 89%

“…The thickness exhibits a lineal behavior with the number of cycles. The growth per cycle (GPC) of the AZO and Al 2 O 3 layers in ALD expo mode are 0.188 ± 0.002 nm/cycle and 0.127 ± 0.001 nm/cycle, respectively, which are comparable values with that reported in the literature for similar deposition conditions to here employed [31,33].…”

Section: Optimization Of Ald Growth Rates Of Conductive Be Te and Dsupporting

confidence: 86%

“…For the case of the AZO films with n = 20, the estimated %Al was 3.28%. This value of Al doping concentration can be considered the most appropriated according to other previous studies carried out to optimize the microstructure and therefore the electrical characteristics of the AZO films deposited by ALD, in order to obtain high degree of crystallinity, low resistivity and decrease in band gap of the conductive layer [33][34][35].…”

Section: Optimization Of Ald Growth Rates Of Conductive Be Te and Dmentioning

confidence: 99%

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Development of electrostatic supercapacitors by atomic layer deposition on nanoporous anodic aluminum oxides for energy harvesting applications

et al. 2015

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Citation:Iglesias L, Vega V, García J, Hernando B and Prida VM (2015) Development of electrostatic supercapacitors by atomic layer deposition on nanoporous anodic aluminum oxides for energy harvesting applications. The conformality of the deposited conductive and dielectric layers, together with their composition and crystalline structure have been checked by XRD and electron microscopy techniques. Impedance measurements performed for the optimized electrostatic supercapacitor device give a high capacitance value of 200 µF/cm 2 at the frequency of 40 Hz, which confirms the theoretical estimations for such kind of prototypes, and the leakage current reaches values around of 1.8 mA/cm 2 at 1 V. The high capacitance value achieved by the supercapacitor prototype together its small size turns these devices in outstanding candidates for using in energy harvesting and storage applications.

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Atomic Layer Engineering of Epsilon‐Near‐Zero Ultrathin Films with Controllable Field Enhancement

Gurung

Anopchenko

Bej

et al. 2020

Adv Materials Inter

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Enhanced and controlled light absorption, as well as field confinement in optically thin materials, are pivotal for energy‐efficient optoelectronics and nonlinear optical devices. Highly doped transparent conducting oxide (TCO) thin films can support the so‐called epsilon near zero (ENZ) modes in a frequency region of near‐zero permittivity, which can lead to the perfect light absorption and ultrastrong electric field intensity enhancement (FIE) within the films. To achieve full control over absorption and FIE, one must be able to tune the ENZ material properties as well as the film thickness. Here, engineered absorption and FIE are experimentally demonstrated in aluminum‐doped zinc oxide (AZO) thin films via control of their ENZ wavelengths, optical losses, and film thicknesses, tuned by adjusting the atomic layer deposition (ALD) parameters such as dopant ratio, deposition temperature, and the number of macrocycles. It is also demonstrated that under ENZ mode excitation, though the absorption and FIE are inherently related, the film thickness required for observing maximum absorption differs significantly from that for maximum FIE. This study on engineering ENZ material properties by optimizing the ALD process will be beneficial for the design and development of next‐generation tailorable photonic devices based on flat, zero‐index optics.

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Electrical and optical properties of Al-doped ZnO and ZnAl2O4 films prepared by atomic layer deposition

Cited by 117 publications

References 23 publications

Effects of Pb2+ ions concentration on the structure and PL intensity of Pb-doped ZnAl2O4 nanocrystals synthesized using sol–gel process

Effects of Pb2+ ions concentration on the structure and PL intensity of Pb-doped ZnAl2O4 nanocrystals synthesized using sol–gel process

Development of electrostatic supercapacitors by atomic layer deposition on nanoporous anodic aluminum oxides for energy harvesting applications

Atomic Layer Engineering of Epsilon‐Near‐Zero Ultrathin Films with Controllable Field Enhancement

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