Electrical behavior of ultra-low energy implanted boron in silicon

Schroer, E.; Priolo, F.; Napolitani, E.; Carnera, A.

doi:10.1063/1.373817

Cited by 43 publications

(8 citation statements)

References 11 publications

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“…The ELA process was performed in vacuum with the sample at RT during irradiation. Figure 1 shows the carrier concentration, as determined by spreading resistance profiling (SRP), 13,14 for the samples irradiated with a single shot at different energy densities, E d . As can be noted, the junction depth, as determined at a carrier concentration of 1 ϫ 10 19 cm −3 , is nearly constant between 0.85-1 J / cm −2 and then rapidly increases, as shown in the inset of Fig.…”

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confidence: 99%

Electrical activation phenomena induced by excimer laser annealingin B-implanted silicon

Fortunato¹,

Mariucci²,

Magna³

et al. 2004

Applied Physics Letters

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The activation process induced by excimer laser annealing (ELA) has been investigated in 10keV B-implanted samples. It is found that for energy densities inducing melt depths of the order or larger of the implanted region the junction depth is controlled by the melt depth, with activation approaching 100% and box-shaped carrier density distributions with abrupt junction profile. For energy densities inducing a melting shallower than the implanted region, two different activation mechanisms have been identified: the first occurring in the molten region and leading to complete B activation; the second occurring in the region immediately below the molten zone and leading to thermal activation of B, induced by the heat wave propagating into the Si wafer. This last process is characterized by an activation energy of 5eV and is not accompanied by B diffusion. As a consequence, a deep tail of active B is produced, preventing the possibility to form abrupt and ultrashallow junctions. These results suggest that for the formation of ultrashallow junctions it is essential to combine ELA with ultralow energy ion implantation.

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confidence: 99%

Electrical activation phenomena induced by excimer laser annealingin B-implanted silicon

Fortunato¹,

Mariucci²,

Magna³

et al. 2004

Applied Physics Letters

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“…15 Moreover, the bevel edge effect, a severe artifact affecting the accurate measurement of the near surface layers, was taken into account. The SRP measurements were performed by means of a SSM 150 instrument, equipped with 5 g probe load.…”

Section: Methodsmentioning

confidence: 99%

Structural and electrical investigation of high temperature annealed As-implanted Si crystals

Bocchi¹,

Felisari

Catellani³

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Triple crystal diffractometry, x-ray standing wave, and transmission electron microscopy investigation of shallow BF 2 implantation in Si Si wafers implanted at 80 keV with different As doses, and next annealed at different temperatures for different times, were studied by means of x-ray triple crystal diffraction, x-ray standing wave, transmission electron microscopy, spreading resistance profile, and electrochemical C-V profiling methods. The implantation processes produced heavily damaged subsurface regions hundreds of nanometers deep. By fitting both the x-ray diffraction curves and the x-ray standing wave photoelectron emission profiles, it was possible to determine the most appropriate strain and atomic static displacement behavior versus depth within the disturbed region of the crystal. The results obtained by x-ray diffraction measurements were confirmed by transmission electron microscopy investigations. Therefore, making use of different structural and electrical characterization techniques it was possible to find: ͑i͒ the depth of amorphization of the implanted regions, ͑ii͒ the appearance of extended defects ͑dislocation loops band͒ during the restoration of the lattice by the annealing processes and the dependence of their size and density on the implant dose and the annealing time and temperature, ͑iii͒ the dopant profiles versus depth as a function of the implant dose and the annealing parameters, ͑iv͒ the effect on the total strain of the doping induced variation of the conduction band minima. The experimental evidence of a screen electronic effect on the As + -Si distance in the restored crystal lattice was confirmed by ab initio calculations.

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“…The ion implanting technology can control dopant atoms location, but implanting influences on a crystal structure. As a result, dopants diffuse too rapidly in thermal annealing process to control the diffusion depth [2,3]. Therefore, fabrication of an ultra-shallow junction with low temperature is required [4].…”

Section: Introductionmentioning

confidence: 99%