Electrical breakdown in thin gate and tunneling oxides

Chen, Ih-Chin; Holland, S.; Hu, Chenming

doi:10.1109/t-ed.1985.21957

Cited by 468 publications

(52 citation statements)

References 32 publications

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“…Under high electric field, nonequilibrium carries are injected from the electrodes and are observed to create traps or change trap distribution. 5,18,[46][47][48][49][50] For example, SrTiO 3 : Cr single crystals and thin films 8 become conductive by a forming process that involves a forced soft breakdown by a high electric field. The trap density increases with the number of these forming steps 18 and a trap-density gradient is directly confirmed.…”

Section: Origin Of Graded Distribution Of Trapsmentioning

confidence: 99%

Unidirectional bulk conduction and the anomalous temperature dependence of drift current under a trap-density gradient

Watanabe

2010

Phys. Rev. B

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Nonlinear drift conduction under a trap-density gradient is mathematically formulated. Semianalytical and numerical solutions demonstrate bulk-induced unidirectional current flow, i.e., rectification. The present theory is in excellent agreement with various experimental J-V characteristics ͑J: current density and V: applied voltage͒. At low V, the J-V characteristics are ohmic and bidirectional. As the injection increases, the J-V characteristics become nonlinear and exhibit unidirectionality under proper conditions. The major requirements for a large unidirectionality are the trap-density gradient G ӷ 1, an intermediate V, and not too large trap-filling factor ⌰, which requires the presence of acceptorlike traps. The unidirectional J-V characteristics due to the difference in trap-filled-to-trap-free-limit voltage V TFL for forward and reverse bias markedly resemble the standard rectification. In addition, the trap-density gradient yields a positive T dependence of resistance for a proper set of parameters, evident J ϰ V 1.5 characteristics, and a photovoltaic effect. The present results suggest that bulk conduction under trap-density gradient explains fractions of resistance switching and rectification phenomena. The semianalytical solutions are verified by numerical solutions and comparison with experiments. In particular, semianalytical solutions for shallow-trap case excellently fit the experimental data by three parameters in practice: two scaling factors and G.

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Section: Origin Of Graded Distribution Of Trapsmentioning

confidence: 99%

Unidirectional bulk conduction and the anomalous temperature dependence of drift current under a trap-density gradient

Watanabe

2010

Phys. Rev. B

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“…On the other hand, the so-called 1/E model [9] assumes that degradation happens as a consequence of Fowler-Nordheim injection of electrons from the substrate into the oxide conduction band; these electrons are accelerated by the applied E field to the anode where damage occurs as a result of impact ionization. Further, in the case of SiO 2 , holes injected from the anode are expected to be trapped onto weakened bonds.…”

Section: Introductionmentioning

confidence: 99%

Effect of electric field on defect generation and migration in HfO2

Strand

Cottom

Larcher³

et al. 2020

Phys. Rev. B

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Understanding the effect of electric fields on defect creation and diffusion in metal oxides is of fundamental importance for developing accurate models of oxide degradation in electronic devices and dielectric breakdown. We use the Berry phase operator method within density functional theory to calculate how an applied electric field affects barriers for the creation of oxygen vacancy-interstitial defect pairs (DPs) and diffusion of interstitial O ions in monoclinic (m-)HfO 2. The results demonstrate that even close to breakdown fields, barriers for DP generation exceed 6 eV in the perfect m-HfO 2 lattice. Simulated injection of extra electrons from electrodes significantly lowers barriers for the creation of DPs, which are further reduced by the field to around 1 eV. Thus, bias application facilitates the injection of electrons into the oxide; these extra electrons reduce energy barriers for the creation of O vacancies, and these barriers as well as those for O ion diffusion are further lowered by the field. We find that, within a linear regime, the electric field modulates the barrier height by a dot product between the electric field and the electric dipole at the zero-field transition state to good accuracy.

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“…Once the local field at the SiCOH/Si interface rises to a critical value, E BD , the field is high enough to promote tunneling of electrons which results in hard failure. This representation is similar to the scenarios of Chen et al 15,16 and O'Dwyer, 17 and relates to a charge-to-breakdown concept since Gauss's law determines the charge concentration required to raise the field in the dielectric to E DB .…”

Section: Modelmentioning

confidence: 77%

On the dynamics of Cu ions injection into low-k nanoporous materials under oscillating applied fields

Borja

Plawsky

et al. 2013

Journal of Applied Physics

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Cu injection into low-k dielectrics was studied using oscillating bipolar field experiments coupled with a mass transport model. Cu/SiCOH/Si structures were stressed using an oscillating square bipolar applied field at 200 °C. Breakdown was defined experimentally as the time it takes for the leakage current to exceed 1 × 10−5 A under given stress conditions. Time to failure was found to depend on field oscillating frequency and amplitude of the applied field. It was determined that ion solubility primarily affects the magnitude of lifetime enhancement, while mobility affects its onset in the frequency domain. Overtime, the local field generated by the accumulation of Cu ions during bias temperature stress resists the action of the oscillating field thus inhibiting the ability to sweep ions from cathode to anode through reversal of the applied field and thereby limits the observed lifetime enhancement. Predictions from the model match trends for experimental data involving transport of Cu ions into SiCOH.

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Electrical breakdown in thin gate and tunneling oxides

Cited by 468 publications

References 32 publications

Unidirectional bulk conduction and the anomalous temperature dependence of drift current under a trap-density gradient

Unidirectional bulk conduction and the anomalous temperature dependence of drift current under a trap-density gradient

Effect of electric field on defect generation and migration in HfO2

On the dynamics of Cu ions injection into low-k nanoporous materials under oscillating applied fields

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