Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric

Abstract

Articles you may be interested inAnalysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate pchannel metal-oxide-semiconductor field-effect transistors Appl. Phys. Lett. 101, 052105 (2012); 10.1063/1.4739525 Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al 2 O 3 as gate dielectric Appl. Phys. Lett. 93, 053504 (2008); 10.1063/1.2969282The positive bias temperature instability of n -channel metal-oxide-semiconductor field-effect transistors with Zr O 2 gate dielectric Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with Dy 2 O 3 gate dielectric Metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field-effect transistors with ZrO 2 gate dielectric were fabricated. The time dependent dielectric breakdown ͑TDDB͒ of ZrO 2 capacitors was studied. It was observed that the Weibull slopes were independent of the capacitor area. The Weibull slopes had no clear dependence on ZrO 2 thickness. The TDDB of ZrO 2 follows the E model. The activation energy E a was linearly dependent on the electric field and the field acceleration parameter ␥ is independent of temperature.

A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory

“…since T is absent in the former expression. This feature has been previously reported for thin films [13,14] and has been ascribed to the collaborative effect of many simultaneous reactions. In [9],  is assumed to depend linearly on T, but no physical justification is 6 provided.…”

The influence of process parameters and pulse ratio of precursors on the characteristics of La1 − x Al x O3 films deposited by atomic layer deposition

“…Therefore, in order to solve these problems, high-k gate dielectrics are being widely considered to replace SiO 2 [2]. For the past years, people have been attracted by many promising candidates, such as aluminum oxide (Al 2 O 3 ), hafnium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), lanthanum oxide (La 2 O 3 ), yttrium oxide (Y 2 O 3 ), and their pseudobinary [3][4][5][6][7][8][9][10], and some exhilarating achievements have been obtained. As a compound of La 2 O 3 and Al 2 O 3 , due to its high dielectric constant (approximately 25), wide energy band gap (5~6 eV), and thermal stability up to 2,100°C, LaAlO 3 is considered as a most promising candidate for SiO 2 replacement [11,12].…”

Systematic investigation on the effect of contact resistance on the performance of a‐IGZO thin‐film transistors with various geometries of electrodes

“…In order to obtain high‐performance TFTs, it is important to use suitable gate dielectric materials and reduce the contact resistance of source and drain. Among many candidates of gate dielectric materials, ZrO 2 is expected to be one of the most promising high‐ k materials due to its desirable properties: high dielectric constant (∼25), high breakdown field intensity (∼15 MV/cm), large band gap (∼5.6 eV), and relatively low leakage current 5–7. Also, the contact resistance of the source and drain affect the device performance, such as on‐current, field effect mobility, and subthreshold swing 8, 9.…”