Electrical characteristics of 100 MeV 28Si implanted LEC grown GaAs〈100〉

Arulkumaran, S.; Arokiaraj, J.; Udhayasankar, M.; Kumar, J.; Kanjilal, D.

doi:10.1016/0168-583x(96)00309-6

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1997

2011

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Cited by 5 publications

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“…The top layer shows damage created by implantation and the bottom layer is the unimplanted layer. The same kind of SEM cross-sectional view has been observed for 100 and 80 MeV 28 Si [14] and 70 MeV 120 Sn [7] implanted GaAs.…”

Section: Resultssupporting

confidence: 69%

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Investigations of the Electrical and Structural Characteristics of 50 MeV7Li Implanted SI-InP

Dharmarasu

Arulkumaran

Sumathi

et al. 1998

phys. stat. sol. (a)

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Section: Resultssupporting

confidence: 69%

“…The third layer is of high resistance compared to the other two layers and therefore, a double-layer analysis is sufficient. If we consider a double-layer structure for which the equations given below are valid [14] 1…”

Section: Resultsmentioning

confidence: 99%