Electrical characteristics of 25 nm Pr(ZrTi)O3 thin films grown on Si by metalorganic chemical vapor deposition

Abstract

Pb(Zr 0.5 Ti 0.5 )O 3 thin films 25 nm in thickness were grown on LaNiO3/Pt/Ti buffered Si substrates at 600 °C by metalorganic chemical vapor deposition. P–E studies showed a remanent polarization value of 8 μC/cm2 with a coercive field of 200 kV/cm. In polarization fatigue studies, these films only showed slight degradation in remanent polarization up to 4×108 cycles (±3 V oscillation) before breakdown. Moreover, the effect of space charge on the C–V behavior of these films was illustrated I–V characteristics of these films were also described.

Phase control of iridium and iridium oxide thin films in atomic layer deposition

“…Perovskite materials, such as SrTiO 3 , ͑Ba, Sr͒TiO 3 , Pb͑Zr, Ti͒O 3 , and SrBi 2 Ta 2 O 9 , are widely studied for the application in dynamic random access memory ͑DRAM͒ and ferroelectric random access memory ͑FRAM͒ devices. [1][2][3][4] These materials require a high temperature process in oxygen ambient for the deposition or crystallization of the films. Moreover, underlying layers such as a poly-Si plug or a TiN barrier could be exposed to oxygen to be oxidized due to the penetration of oxygen into the electrode materials during this highly oxidizing ambient.…”

“…5 Ruthenium ͑Ru͒ is a widely studied electrode material due to its formation of conductive ruthenium oxide ͑RuO 2 ͒, low resistivity, and ability to block the diffusion of oxygen into the underlying layer during heat treatment. 6 However, Ru and RuO 2 readily form the volatile species, such as RuO 3 and RuO 4 , during high temperature annealing. Above the temperature of 700°C, the film degradation of a RuO 2 / Ru stacked structure was reported due to the formation of the volatile species.…”

Dielectric properties of oriented PbZrO3 thin films grown by sol-gel process

“…,15 Each spin-on layer was heat-treated at 400°C for 5 min. The deposition and heat treatment were repeated until the desired thickness was reached.…”

Characterization of self-assembling isolated ferroelectric domains by scanning force microscopy

“…Over 25 years the theoretical works have been done to estimate the minimum ferroelectric film thickness and few experimental works, realized only in recent, below in 100 nm in thickness, which is impetus for the current investigation [4,5]. The investigations of size effects in ferroelectric films were focused on the dependencies of films' thickness, not on the lateral dimension [6,7].…”