Electrical Characteristics of n, p-In_0.53Ga_0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer

Abstract

The effects of plasma enhanced atomic layer deposition (PEALD)-AlN interfacial passivation layer (IPL) on the Al 2 O 3 /In 0.53 Ga 0.47 As interfaces qualities are studied with different plasma powers. The improvement in electrical properties, including capacitance-voltage (C-V ) hysteresis, frequency dispersion, and interface state densities ( D it ) are demonstrated on the Al 2 O 3 /n, p-In 0.53 Ga 0.47 As MOS capacitors. The excellent C-V behaviors are observed on both type of In 0.53 Ga 0.47 Asbased MOS devices by performing a thin AlN-IPL at the plasma power of 150 W. To explore the interaction between PEALD-AlN layer and In 0.53 Ga 0.47 As surface, X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy analyses have also been characterized. Index Terms-Al 2 O 3 , AlN, In 0.53 Ga 0.47 As, MOS capacitor (MOSCAP), plasma enhanced atomic layer deposition (PEALD).

Plasma Enhanced Atomic Layer Deposition Passivated HfO₂/AlN/In_0.53Ga_0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density

“…Terman method, providing the evaluation of fast and slow traps from the midgap to near band-edges, was applied to estimate the D it inside the InGaAs band gap [8], [9], [18] …”

“…The substrate temperature was kept at 250 °C. In ALD chamber, TMA and NH 3 gas were used as precursors for PEALD-AlN deposition and plasma power was 150 W [8]. TEMAHf and water were used for thermal-HfO 2 deposition.…”

“…Besides, post-gate treatment with fluorine (F) plasma has also been reported to optimize the high-k gate stack [7]. In previous work, we have demonstrated that the PEALD-AlN as interfacial passivation layer (IPL) is beneficial to improve the quality of Al 2 O 3 /In 0.53 Ga 0.47 As interface, featuring strong inversion capacitance-voltage (C-V) behaviors, good current-voltage properties (J-V) and low D it value near midgap [8]. In this work, we examine the influence of in situ PEALD process, that consists of AlN-IPL pre-treatment and post remote-plasma (PRP) gas treatment, on the passivation of HfO 2 /In 0.53 Ga 0.47 As MOS devices.…”